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    TRANSISTOR 200 GHZ Search Results

    TRANSISTOR 200 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 200 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.


    Original     		PDF BLS7G3135LS-200

    Untitled

    Abstract: No abstract text available
    Text: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.


    Original     		PDF BLS7G3135LS-200

    MRF1001A

    Abstract: high frequency transistor
    Text: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C


    Original     		PDF MRF1001A MRF1001A high frequency transistor

    1416-200

    Abstract: No abstract text available
    Text: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This


    Original     		PDF 1600MHz, 1416-200

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    Untitled

    Abstract: No abstract text available
    Text: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.


    Original     		PDF BLF7G15LS-200 BLF7G15LS

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages


    Original     		PDF MP4T243 MP4T24300 MP4T24335

    high frequency transistor

    Abstract: No abstract text available
    Text: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: • POSC = 630 mW Typical at 7.5 GHz


    Original     		PDF 2SC2951 2SC2951 high frequency transistor

    2SC2951

    Abstract: high frequency transistor
    Text: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG FEATURES: • POSC = 630 mW Typical at 7.5 GHz • Omnigold Metallization System


    Original     		PDF 2SC2951 2SC2951 high frequency transistor

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 55-QP 2731GN

    BPT18E01

    Abstract: BPT18E02 BPT18E05
    Text: BIPOLARICS, INC. Part Number BPT18E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT18E01 is a high performance silicon bipolar transistor


    Original     		PDF BPT18E01 BPT18E01 BPT18E02 BPT18E05, BPT18E02 BPT18E05

    BPT23E01

    Abstract: BPT23E02 BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ
    Text: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT23E01 is a high performance silicon bipolar transistor


    Original     		PDF BPT23E01 BPT23E01 BPT23E02 BPT23E04, BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ

    MSC80834

    Abstract: GP 458
    Text: MSC 80834 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80834 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 250 mA VCB 45 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC


    Original     		PDF MSC80834 GP 458

    S21E2

    Abstract: 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION •Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.


    Original     		PDF 2SC2408 S21e2 200MHz; S21E2 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR

    80836

    Abstract: MSC80836 msc80
    Text: MSC 80836 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC80836 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 700 mA VCB 45 V PDISS 17 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 8 C/W


    Original     		PDF MSC80836 80836 msc80

    PH1417-200S

    Abstract: F 140 F140 C5 155 10 PH1417
    Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor


    OCR Scan     		PDF PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


    OCR Scan     		PDF MRF581 transistor 81 110 w 63

    MRF5811

    Abstract: ADC IC 0808
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1 MRF5811LT1 MRF5811 ADC IC 0808

    QE R 643

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip


    OCR Scan     		PDF MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643

    Untitled

    Abstract: No abstract text available
    Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages


    OCR Scan     		PDF MA4T243 MA4T24300

    LE50

    Abstract: 2SC2408 PA33 SC-43A
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SC2408 2SC2408 is designed for High frequency Wide Band Amplifier. |S 2 1ei2 21 dB TYP. @200 MHz NF 2.4 dB TYP. @200 MHz ABSOLUTE M A X IM U M RATINGS Maximum Temperatures Storage Tem perature.


    OCR Scan     		PDF 2SC2408 2SC2408 SC-43A S21el2 VCEs10 f-200 LE50 PA33 SC-43A