TRANSISTOR 20 DB 14 GHZ Search Results

TRANSISTOR 20 DB 14 GHZ Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 20 DB 14 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC 7432 Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6 Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 14 dB TYP at f = 2 GHz	Original	NE699M01 NE699M01 NE687) OT363 24-Hour IC 7432 AT 1004 S12 IC 7432 power dissipation NE687 NE699M01-T1 S21E of IC 7432 S12 sot 23-6	PDF
6621 sot-23 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01 NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555 Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 • HIGH fT: 16 GHz TYP TOP VIEW • HIGH GAIN: \|S21E\|2 = 14 dB TYP at f = 2 GHz, VCE = 2 V, Ic = 20 mA	Original	NE699M01 NE699M01 OT-363 OT-23 OT143 24-Hour 6621 sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555	PDF
Untitled Abstract: No abstract text available Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4012036-FL T1G4012036-FL	PDF
Untitled Abstract: No abstract text available Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4012036-FS T1G4012036-FS	PDF
Untitled Abstract: No abstract text available Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G6001528-SG T2G6001528-SG TQGaN25	PDF
Untitled Abstract: No abstract text available Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T2G6001528-SG T2G6001528-SG TQGaN25	PDF
BFR92 application note Abstract: BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23	Original	BFR92 MSB003 BFT92. BFR92 application note BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90	PDF
Untitled Abstract: No abstract text available Text: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics	Original	T1G2028536-FL T1G2028536-FL TQGaN25HV	PDF
Untitled Abstract: No abstract text available Text: T1G2028536-FS 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics	Original	T1G2028536-FS T1G2028536-FS TQGaN25HV	PDF
transistor SMD p90 Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features	Original	T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd	PDF
BFT25A Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN Text: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up	Original	BFT25A BFT25A MCD113 MCD110 RF POWER TRANSISTOR NPN	PDF
Untitled Abstract: No abstract text available Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	TGF2819-FS TGF2819-FS	PDF
BFG520 Abstract: No abstract text available Text: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	BFG520; BFG520/X; BFG520/XR BFG520XR BFG520	PDF
Untitled Abstract: No abstract text available Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	TGF2819-FL TGF2819-FL	PDF

Untitled Abstract: No abstract text available Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G3000532-SM T1G3000532-SM 30MHz	PDF
Untitled Abstract: No abstract text available Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G3000532-SM T1G3000532-SM 30MHz	PDF
BFG540 Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760 Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	BFG540; BFG540/X; BFG540/XR BFG540 BFG540XR BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760	PDF
Untitled Abstract: No abstract text available Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	BFG540; BFG540/X; BFG540/XR BFG540 BFG540XR	PDF
transistor w 431 Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features	Original	T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd	PDF
NEC 2706 Abstract: nec 501 t 6229 6pin Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 16 G H zT Y P . 2.1 ± 0.1 1.25+0.1 \|Szie\|2 = 14 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 20 mA	OCR Scan	2SC5409 2SC5409-T1 50-pcs NEC 2706 nec 501 t 6229 6pin	PDF
sl 0565 r Abstract: 6621 sot-23 p 0368 mini Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP TOP VIEW • HIGH GAIN: 2.1 ± 0.1 IS 21 e \|2 = 14 dB TYP a tf = 2 GHz, V ce = 2 V, Ic = 20 mA	OCR Scan	NE699M01 NE699M01 OT-363 OT-23 sl 0565 r 6621 sot-23 p 0368 mini	PDF
BFR92A Abstract: bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ Text: DISCRETE SEMICONDUCTORS BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistor	OCR Scan	BFR92A BFT92. collector-emittFR92A bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ	PDF
BFG90A Abstract: No abstract text available Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in	OCR Scan	BFG90A OT103 OT103. BFG90A	PDF
bc870 Abstract: Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23 Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.	OCR Scan	OT323 BFR92AW BFR92A. BFR92AW BC870 7110fiSL bc870 Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23	PDF

TRANSISTOR 20 DB 14 GHZ Search Results

TRANSISTOR 20 DB 14 GHZ Result Highlights (5)

TRANSISTOR 20 DB 14 GHZ Datasheets Context Search

IC 7432

6621 sot-23

Untitled

Untitled

Untitled

Untitled

BFR92 application note

Untitled

Untitled

transistor SMD p90

BFT25A

Untitled

BFG520

Untitled

Untitled

Untitled

BFG540

Untitled

transistor w 431

NEC 2706

sl 0565 r

BFR92A

BFG90A

bc870