TRANSISTOR 1PC Search Results

transistor 1PC

Abstract: marking 1PC
Contextual Info: Central CMST2222A TM Semiconductor Corp. SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small

transistor 1PC

Abstract: CMST2222A ic 455 marking 1PC
Contextual Info: CMST2222A SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small

Contextual Info: Central" CMST2222A Semiconductor Corp. SUPERmmi NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,

LB-215

Contextual Info: Central CMST2222A SURFACE MOUNT SUPERmini NPN SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,

transistor 1PC

Abstract: CMST2222A 1pc marking
Contextual Info: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general

Contextual Info: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general

NPN transistor a777

Abstract: 2SC3103 J55J
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3103 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2S C 3103 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES • High power gain: G peê 6 .7 d B

Contextual Info: TO SH IB A TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T I T I P 5 3 ? PRO GRAM M ABLE CONTROLLERS U n it in mm AC/DC-INPUT MODULE <;ni in <;t a t f rfi a y The ruSirLlBA T.LJr’531 and TLF532 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC4091 J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER The ,uPC4091 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage solves the

Contextual Info: TPC8001 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI T P ffin m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON)= 15m£2 (Typ.) • High Forward Transfer Adm ittance: |Yfs| = IIS (Typ.)

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ^PC4092 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER The ,uPC4092 dual operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage solves the

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ^PC4094 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER Dual operational amplifier ,uPC4094 is a high-speed version of the ,uPC4092. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage realizes a high slew rate of 25 V/^ts under voltage-follower conditions

BUL4370D

Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4370D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管

BUL6845D

Abstract: NPN transistor Electronic ballast
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6845D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管

max 474 ic data

Abstract: NPN Transistor 1A metal switching
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2160DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管

150UM

Abstract: BUL2190DL
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2190DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管

Bonding

Abstract: Shenzhen SI Semiconductors BUL2260DL NPN transistor Electronic ballast semiconductors
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2260DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管

BUL2300DL

Abstract: transistor cr
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2300DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管

NPN transistor Electronic ballast

Abstract: TRANSISTOR 436 BUL6853DL transistor cr
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL6853DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管

BUL4330D

Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4330D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管

BUL6852D

Abstract: NPN transistor Electronic ballast VCE1 power diode 10a
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6852D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管

BUL6863D

Abstract: transistor AG 307 semiconductors NPN transistor Electronic ballast
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6863D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管