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    TRANSISTOR 1KP Search Results

    TRANSISTOR 1KP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1KP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    BCV61

    Abstract: BCV61A BCV61B BCV61C BCV62
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING


    Original     		PDF M3D071 BCV61 OT143B BCV62. SCA63 115002/00/03/pp8 BCV61 BCV61A BCV61B BCV61C BCV62

    339 marking code transistor

    Abstract: marking code 1kp BCV61 BCV61A BCV61B BCV61C BCV62
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BCV61 NPN general purpose double transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 16 Philips Semiconductors Product specification NPN general purpose double transistor


    Original     		PDF M3D071 BCV61 SCA54 117047/00/02/pp8 339 marking code transistor marking code 1kp BCV61 BCV61A BCV61B BCV61C BCV62

    marking code 1kp

    Abstract: BCV61 BCV61A BCV61B BCV61C BCV62 1Lp marking transistor 1kp 1kp marking
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor Product data sheet Supersedes data of 1997 Jun 16 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA


    Original     		PDF M3D071 BCV61 OT143B BCV62. 115002/00/03/pp8 marking code 1kp BCV61 BCV61A BCV61B BCV61C BCV62 1Lp marking transistor 1kp 1kp marking

    NPN Transistor TO92 300ma

    Abstract: npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR
    Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure


    Original     		PDF TSC5988 300mA TSC5988CT NPN Transistor TO92 300ma npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR

    transistor E11

    Abstract: NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR
    Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure


    Original     		PDF TSC5988 300mA TSC5988CT transistor E11 NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR

    2N5179

    Abstract: No abstract text available
    Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage


    Original     		PDF 2N5179 12DEG 48DEG 325gm/1Kpcs 32kgs 2N5179

    1.5A NPN power transistor TO-92

    Abstract: vbe 10v, vce 500v NPN Transistor
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure


    Original     		PDF TSC10 TSC10CT 1.5A NPN power transistor TO-92 vbe 10v, vce 500v NPN Transistor

    TSC1300

    Abstract: TSC13002H tsc13002
    Text: TSC13002H Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 750V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure


    Original     		PDF TSC13002H 200mA TS13002HCT TSC1300 TSC13002H tsc13002

    TSB1424A

    Abstract: TSD2150A TSD2150ACY
    Text: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A


    Original     		PDF TSD2150A OT-89 TSB1424A TSD2150ACY 200mA TSB1424A TSD2150A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 700V BVCBO 1500V IC VCE SAT Features 1A 1.0V @ IC / IB = 0.5A / 0.1A Block Diagram  Very High Voltage  High Speed Switching


    Original     		PDF TSC5401 TSC5401CT

    TSA894

    Abstract: No abstract text available
    Text: TSA894 PNP Silicon Planar High Voltage Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V -150mA IC VCE SAT Features   Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original     		PDF TSA894 -500V -150mA -50mA TSA894CT -50mA -10mA TSA894

    d 772 transistor

    Abstract: TSB772 TSD772CK TSD882 772 pnp transistor 200ma pnp
    Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -50V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882


    Original     		PDF TSB772 O-126 200mA TSD882 TSD772CK -200mA d 772 transistor TSB772 TSD882 772 pnp transistor 200ma pnp

    0118 transistor

    Abstract: 385 b12 TSA5888 TSA5888CY
    Text: TSA5888 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -40V IC -5.5A VCE SAT Features -175mV @ IC / IB = -3.5A / -175mA Ordering Information Adoption of FBET and MBIT processes. High current capacitance.


    Original     		PDF TSA5888 OT-89 -175mV -175mA TSA5888CY OT-89 0118 transistor 385 b12 TSA5888

    d 772 transistor

    Abstract: transistor 772 "PNP Transistor" TSB772 TSD772CK TSD882 transistor 200ma pnp
    Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882


    Original     		PDF TSB772 O-126 200mA TSD882 TSD772CK -200mA d 772 transistor transistor 772 "PNP Transistor" TSB772 TSD882 transistor 200ma pnp

    TSB1132

    Abstract: TSD1664 TSD1664CY
    Text: TSD1664 Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 32V BVCBO 40V IC 1A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Complementary part with TSB1132


    Original     		PDF TSD1664 OT-89 500mA TSB1132 TSD1664CY TSB1132 TSD1664

    TSD882S

    Abstract: TSB772S TSB772SCT
    Text: TSB772S Low Vcesat PNP Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882S


    Original     		PDF TSB772S 200mA TSD882S TSB772SCT -200mA TSD882S TSB772S

    Untitled

    Abstract: No abstract text available
    Text: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram  High Voltage  High Speed Switching Structure 


    Original     		PDF TSC10 TSC10CT

    npn 600v to92

    Abstract: NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma TSC966cw A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92
    Text: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ●


    Original     		PDF TSC966 OT-223 300mA TSC966CT TSC966CW npn 600v to92 NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92

    ib101

    Abstract: tsc5401 TSC54 NPN transistor 500ma TO-92 NPN Transistor 1A 400V to - 92 NPN TO92 400V
    Text: Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 700V BVCBO 1500V IC VCE SAT Features 1A 1.0V @ IC / IB = 0.5A / 0.1A Block Diagram ● Very High Voltage ● High Speed Switching


    Original     		PDF TSC5401 TSC5401CT ib101 tsc5401 TSC54 NPN transistor 500ma TO-92 NPN Transistor 1A 400V to - 92 NPN TO92 400V

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    marking code ER sot 143

    Abstract: transistor 1kp 1Kp SOT143 transistor 778
    Text: BCV61 ; 61A BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic package, designed fo r use in applications where the working point must be independent o f temperature. Owing to application o f tw o similar crystals o f one slice this device has a good thermal coupling and


    OCR Scan     		PDF BCV61 BCV61B; OT-143 BCV62. BCV61B BCV61 marking code ER sot 143 transistor 1kp 1Kp SOT143 transistor 778

    L7E transistor

    Abstract: transistor 1kp bm1 transistor marking code ES3 two transistor forward BCV61 BCV61A BCV61B BCV61C BCV62
    Text: • bbS3^31 0D2MS43 4ÔG H A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B; 61C L.7E D SILICON PLANAR EPITAXIAL TRANSISTOR D ouble n-p-n transistor, in S O T -1 4 3 plastic envelope, designed fo r use in applications where the w orkin g p oint m ust be independent o f temperature.


    OCR Scan     		PDF 0D2MS43 BCV61 BCV61B; OT-143 BCV62. 00245Mb BCV61 L7E transistor transistor 1kp bm1 transistor marking code ES3 two transistor forward BCV61A BCV61B BCV61C BCV62

    transistor 1kp

    Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
    Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS


    OCR Scan     		PDF BCV61 OT143B BCV62. BCV61 BCV61A BCV61B BCV61C transistor 1kp transistor 406 specification marking code 1kp 1Lp marking TRANSISTOR 404 LC marking code transistor