TRANSISTOR 1GS Search Results

transistor 1gs

Abstract: T0-220AB BUK455-60A
Contextual Info: Phittps Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

transistor 1gs

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK453-100A

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D • 711Dfl2t QDb4041 MTO * P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor marking code 325

Abstract: BSP110 marking r8v
Contextual Info: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer

2SK425

Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
Contextual Info: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <

K545

Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Contextual Info: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

Contextual Info: KSR1103 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, RJ=22KQ) • Complement lo KSR2103 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

N4416

Abstract: 2M44 2N4416 2N4416A 2n4416 transistor
Contextual Info: Datasheet Central 2N4416 2N4416A Sem iconductor Corp. N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-72 CASE DESCRIPTION

Contextual Info: TOSHIBA 2SK3403 n TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE -MOS V 2SK3403 TENTATIVE SWITCHING REGULATOR APPLICATIONS UNIT:mm • Low Drain - Source ON Resistance: R d s (ON) = 0-29 H ( Typ.) • High Forward Transfer Admittance : |YfS| = 5.8 S ( Typ.)

2N4338

Abstract: 2N4339 2N4340 2N4341
Contextual Info: Datasheet ^ _ • 2N4338 PO H A m m ■ 2N4339 2N4340 2N4341 Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR Manufacturers of World Class Discrete Semiconductors

YTFP451

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: YTFP451 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED.HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,OC-OC CONVERTER AND MOTOR U nit in na DRIVE APPLICATIONS. 1&9MAX. m FEATURES: • Low Drain-Source ON Resistance :

OF TRANSISTOR 2N5485

Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486
Contextual Info: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors

YTF821

Contextual Info: YTF821 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS U n i t in ram HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC C ONVERTER AND MOTOR 1 0.3 MAX. j2(3.6±0.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance

AYN TI W

Abstract: iGSS 100nA Vgs 0v
Contextual Info: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2SK1487

Abstract: s20k 1d 1107 s20k 250
Contextual Info: 2SK1487 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE {»-MOSm-5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 15.9MUC. 0 3 .2 ± o 2 FEATURES: • Low Drain-Source ON Resistance : RDS 0N) = 0.64Q (Typ.)

bss84

Abstract: 013A1 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type lD BSS84 Vbs -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 -0.13 A Pin 3 S ROS{on) Package Marking

2N3820

Abstract: 2n3820 transistor to 92 case
Contextual Info: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.

smd transistor marking dj

Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

2SK33

Abstract: m745
Contextual Info: SE P 2 5 '0 0 06:01 »CCT-FftX» HNO:05250258 < t a a lK ^ R^67361 M745 [A lt.] » 1 5 /0 1 / OUT:0001 T O S H I B A 2SK3399 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE * -MOSV 2SK3 3 9 9

BUZ71A

Abstract: BUZ71
Contextual Info: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics

DIODE S4 71

Abstract: DIODE S4 64 Siemens DIODE E 1220 BUZ 1025 SS 410
Contextual Info: SIEMENS BUZ 102S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • d u /d i rated Type ^DS b f f DS on Package Ordering Code BUZ 102S-4 55 V 6.4 A 0.028 Q, P-DSO-28 C67078-S. . . . -A. Maximum Ratings

Contextual Info: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information

transistor buz 19

Abstract: diode zd 12 diode zd 22 JS 8 diode
Contextual Info: SIEMENS BUZ 104SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS b f f DS on Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Q P-DSO-28 C67078-S. . . . . . .