TRANSISTOR 1GE Search Results

2SK926

Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SK926 The 2SK976 is N-channel MOS Field E ffe c t Power PACKAG E D IM ENSIONS irl mil irrveiarj InchesJ Transistor designed for sw itching power supplies, DC-DC

TX033

Abstract: westcode igbt
Contextual Info: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

transistor 600v 500a

Abstract: T0500NA25 D-68623 T0500 ic 90807
Contextual Info: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

Contextual Info: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

T0340VB

Abstract: T0340VB45G westcode igbt
Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

T1500TB25E

Contextual Info: Date:- 18 Feb, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250

T0160NB45A

Contextual Info: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

T0510VB45E

Contextual Info: Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

T2400GB

Contextual Info: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800

IGBT DRIVER Analog Devices

Abstract: 300V dc to dc boost converter flash trigger transformer fly-back transformer igbt transformer driver Xenon Flash 6v 6206 voltage regulator 12 pin flyback transformer bi-directional switches IGBT fly back transformer
Contextual Info: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16

T0258HF65G

Contextual Info: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

igbt flash

Abstract: "flyback transformer" igbt xenon tube 8 pin 24v transformer xenon flash circuit CMX881
Contextual Info: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16

Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

Contextual Info: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

T1200EB45E

Contextual Info: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

Contextual Info: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

CW 7805 regulator

Abstract: cw 7805 TRANSISTOR CW 7805 resistor 1.2k 1/CW 7805
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

IC500A

Abstract: t0800ta45e D-68623 T0800 transistor D 982
Contextual Info: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

CW 7805

Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

CW 7805 regulator

Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

T2400GA45E

Abstract: T2400 D-68623
Contextual Info: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T1200EB

Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
Contextual Info: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

MJ 5030

Abstract: T0900TA52E
Contextual Info: Date:- 17 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.