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    TRANSISTOR 1CS Search Results

    TRANSISTOR 1CS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1CS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended tor use in horizontal deflection circuits of large screen colour television receivers.


    OCR Scan     		BU2520DX 100Pp/P PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to


    OCR Scan     		BU2727A PDF

    QM30DY-H

    Abstract: QM30DY-HB
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750


    OCR Scan     		QM30DY-HB M30DY-HB E80276 E80271 Vcc-300V QM30DY-H QM30DY-HB PDF

    2N404 transistor

    Abstract: 2N404 VCE0-20V Germanium power
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage


    OCR Scan     		7X10-4 2N404 transistor 2N404 VCE0-20V Germanium power PDF

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103 PDF

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100 PDF

    transistor bc icbo nA npn

    Abstract: 847S Q62702-C2372 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original     		Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs PDF

    2SD2604

    Abstract: 5001T
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2


    OCR Scan     		2SD2604 2SD2604 5001T PDF

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Jul-02-2001 EHP00365 BC847S VPS05604 PDF

    transistor bc 499

    Abstract: 1CS K2 marking 1cs transistor Bc 580
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code


    OCR Scan     		Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580 PDF

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


    OCR Scan     		Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5


    Original     		BC847S EHA07178 OT363 PDF

    847S

    Abstract: VPS05604 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		VPS05604 EHA07178 OT-363 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 847S VPS05604 marking 1cs PDF

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		BC847S VPS05604 EHA07178 OT363 BC847S VPS05604 PDF

    MARKING 1cs

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		BC847S VPS05604 EHA07178 OT363 MARKING 1cs PDF

    BC846U/S

    Abstract: BC846U
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 BC846U/S PDF

    1DS sot363

    Abstract: marking 1DS sot363
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 1DS sot363 marking 1DS sot363 PDF

    marking 1DS sot363

    Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846S BC846U EHA07178 marking 1DS sot363 1Ds SOT363 BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs PDF

    h11e

    Abstract: No abstract text available
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 h11e PDF

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S PDF

    2N3820

    Abstract: 2n3820 transistor to 92 case
    Text: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.


    OCR Scan     		2N3820 2n3820 transistor to 92 case PDF

    2N6558

    Abstract: 2N6557 2N6559
    Text: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		2N6557 2N6558 2N6559 7j-202 20MHz 2N6558 2N6557 2N6559 PDF

    MPQ2907

    Abstract: c-300mA MPQ2906 1-B215
    Text: Data Sheet MPQ2906 MPQ2907 PNP S IL IC O N QUAD TRANSISTOR S e m ic o n d u c to r C o rp . 145 Adams Ave., Hauppauge, N Y 11788 USA Phone 516 435-111 0 JEDEC T O - 116 CASE FAX (516) 4 3 5 -1 8 2 4 Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		MPQ2906 MPQ2907 O-116 MPQ2906, MPQ2907 150mA, 300mA, MPQ2906) MPQ2907) c-300mA 1-B215 PDF

    d 3151

    Abstract: marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s
    Text: M IL -S -19500/17 8B N AVY 29 May 1964_ S u p e r s e d in g M IL -S -19500/178A (NAVY) 13 O ctober 1961 (See 6.2) MILITARY SPECIFICATION TRANSISTOR, PNP, CERMAMUM TYPF 2N11G5 1. hi SCOPE 1.1 Scop«.- This specification covers the d tU t. requirem ents (or a ijerm aniuin, PNP tra n sisto r and is


    OCR Scan     		MIL-S-19500/17 MIL-S-19500/178A 2N11G5 MIL-S-19500, d 3151 marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s PDF