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    TRANSISTOR 1AM 5 Search Results

    TRANSISTOR 1AM 5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1AM 5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code


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    OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


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    LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape PDF

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


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    OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


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    OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc PDF

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F PDF

    1AM c

    Abstract: 1AM marking transistor
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    MMBT3904 300mW, OT-23 MIL-STD-202, 1AM c 1AM marking transistor PDF

    MMBT3904-HF

    Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


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    MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02 OT-23 transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR W(Tamb=25℃) 2.4 1.3 Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃


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    OT-23 MMBT3904LT1 MMBT3904LT1 100MHz 037TPY 950TPY 550REF 022REF PDF

    LMBT3908LT1G

    Abstract: 1AM 6 1AM c
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


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    AEC-Q101 LMBT3908LT1G S-LMBT3908LT1G LMBT3908LT3G S-LMBT3908LT3G 3000/Tape 10000/Tape LMBT3908LT1G 1AM 6 1AM c PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-23 OT-23 MMBT3904 MMBT3906 100mA 100MHz PDF

    1AM marking transistor

    Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
    Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    MMBT3904LT1 OT-23 OT-23 10mAdc, 10mAdc 100MHz MMBT3904LT1 1AM marking transistor transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking 1AM transistor sot-23 Marking 1am PDF

    2N3904 1AM

    Abstract: transistor 1am 1AM marking transistor 1AM transistor 2n3904 sot 23 marking code 1AM sot-23 Marking 1am 2N3904 SOT-23 MARKING CODE
    Text: MMBT3904 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 ct u d ro P New .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector


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    MMBT3904 O-236AB OT-23) MMBT3906 2N3904 1AM transistor 1am 1AM marking transistor 1AM transistor 2n3904 sot 23 marking code 1AM sot-23 Marking 1am 2N3904 SOT-23 MARKING CODE PDF

    2N3904 1AM

    Abstract: marking code 1AM transistor 1am 1AM marking transistor 2N3904 SOT-23 MARKING CODE transistor marking 1am pin configuration NPN transistor 2N3904 MMBT3904 1am 1AM transistor 2n3904 sot 23
    Text: MMBT3904 Small Signal Transistor NPN TO-236AB (SOT-23) New .122 (3.1) .110 (2.8) .016 (0.4) Top View t c u d o r P Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95)


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    MMBT3904 O-236AB OT-23) OT-23 E8/10K 2N3904 1AM marking code 1AM transistor 1am 1AM marking transistor 2N3904 SOT-23 MARKING CODE transistor marking 1am pin configuration NPN transistor 2N3904 MMBT3904 1am 1AM transistor 2n3904 sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage


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    OT-23 MMBT3904LT1 OT-23 10mAdc, 10mAdc MMBT3904LT1 100MHz PDF

    marking code 1AM

    Abstract: CODE 1AM MMBT3904 1am 1AM marking N-MMBT3904
    Text: MMBT3904 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT3906 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃


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    MMBT3904 MMBT3906) OT-23 2002/95/EC 100MHz Jun-2009, KSNR11 MMBT3904 marking code 1AM CODE 1AM MMBT3904 1am 1AM marking N-MMBT3904 PDF

    marking code 1AM

    Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


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    MMBT3904LT1 marking code 1AM 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am PDF

    marking code 1AM

    Abstract: transistor marking 1am 1AM marking CODE 1AM transistor 1am 1AM marking transistor N-MMBT3904 ci lsc complementary mmbt3904 sot23 marking 1AM
    Text: MMBT3904 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT3906 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    MMBT3904 MMBT3906) OT-23 2002/95/EC marking code 1AM transistor marking 1am 1AM marking CODE 1AM transistor 1am 1AM marking transistor N-MMBT3904 ci lsc complementary mmbt3904 sot23 marking 1AM PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a LMBT3904LT1G S-LMBT3904LT1G Pb−Free Lead Finish • • We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique


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    LMBT3904LT1G S-LMBT3904LT1G AEC-Q101 LMBT3904LT3G S-LMBT3904LT3G 3000/Tape 10000/Tape LMBT3904LT1G PDF

    75558

    Abstract: BCY72 2.T transistor planar
    Text: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Verstärker und Schalter Applications: A m plifiers and switches Abmessungen in mm Dimensions in mm 2,54 0 iß 1 5,7 0 0,5 K o lle kto r m it G ehäuse verbunden


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    TRANSISTOR BFW 11

    Abstract: BFW93 C11B
    Text: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)


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    CB-146 BFW93 n430n TRANSISTOR BFW 11 BFW93 C11B PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130


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    D012D11 LA1130 SIP-16 LA1135 LA1135M DIP-20S MFP-20 LA1136N LA1136NM DIP24S PDF

    BF 194 transistor

    Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200


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    BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5V Linear Controller/Driver Description The CS-8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS-8128 with a TTP42


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    CS-8128 TTP42 500mA, 350mV 500mA CS-8128197 CS-8128N8 CS-8128D8 PDF

    2N918

    Abstract: No abstract text available
    Text: Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Verstärker und O szillatoren im UHF-Bereich Applications: A m plifiers and oscilla to rs in the UHF range Abmessungen in mm Dimensions in mm 2,54


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