NTE74HC4067
Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B
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NTE40175B
NTE4017B
NTE40182B
NTE4018B
NTE4001B
NTE4019B
NTE4001BT
NTE40192B
NTE4002B
NTE40193B
NTE74HC4067
NTE4097B
NTE74HC299
NTE4017B
NTE4007
NTE4023B
NTE4027B
NTE74HC4053
NTE4553B
NTE74HC165
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP3N50E
PHX2N50E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of FHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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FHP2N40E
PHX1N40E
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s3331
Abstract: No abstract text available
Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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bbSBT31
BU1508DX
bb53T31
S3331
DD2fl33fl
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ302AX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ202AX
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BUK474
Abstract: No abstract text available
Text: Philips Semi c on du ct or s Pr od uc t specification B U K 4 74 -200 A /B P o w e rM O S transistor I s o la t e d v e rs io n of B U K 4 5 4 - 2 0 0 A / B GENERAL DESCRIPTION N-channel enhancement mode field-effed power transistor in a plastic full-pack envelope. The
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BUK474
-200B
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LD25C
Abstract: PHX9NQ20T Philips L 7.2A AA PHF9NQ20T
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor FEATURES • • • • PHX9NQ20T , PHF9NQ20T SYMBOL ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance QUICK REFERENCE DATA d I / VDSS = 200 V
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PHX9NQ20T,
PHF9NQ20T
PHX9NQ20T
OT186A
OT186
OT186
O-220
OT186;
LD25C
Philips L 7.2A AA
PHF9NQ20T
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N28 diode
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification TrenchMOS transistor Standard level FET PHX6N28T FEATURES • • • • • • QUICK REFERENCE DATA VDSS = 275 V ’Trench’ technology Low on-state resistance Fast switching Stable off-state characteristics
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PHX6N28T
PHX6N28T
OT186A
N28 diode
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Untitled
Abstract: No abstract text available
Text: - 7 ^ 3 9 - Philips Components Data sheet status Preliminary specification date of issue March 1991 R eplaces BUK543-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK573-100A/B
711002b
BUK543-100A/B
BUK573
-100A
10old
T-39-09
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BU4506AZ
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced perform ance, new generation, high-voltage, high-speed sw itching npn tran sistor in a plastic fu ll-pa ck envelope intended fo r use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU4506AZ
BU4506AZ
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PHF14NQ20T
Abstract: PHX14NQ20T
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching V DSS = 2 0 0 V lD = 7 .6 A ^ ds on — 2 3 0 m£2
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PHX14NQ20T,
PHF14NQ20T
PHX14NQ20T
OT186A
OT186
OT186
O-220
OT186;
PHF14NQ20T
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ101AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor
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BUJ101AX
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor
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BUJ301AX
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S1514
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T GENERAL DESCRIPTION N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic fu ll-p a ck envelope using
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K9775-55
S1514
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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transistor ECG 152
Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ECG 152
Bt 2313
transistor outlines
transistor ecg36
TRANSISTOR ecg 379
ECG157
123AP
transistor ECG 332
Philips ECG 152
ECG 3041
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transistor pnp ecg 180
Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
transistor pnp ecg 180
Transistor 123AP
123AP
transistor BU 102A
transistor fet ecg
transistor. ECG 123AP
4511 gm
Bt 2313
transistor t18 FET
ecg 123 transistor
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Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
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transistor ecg36
Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ecg36
transistor ECG 152
TRANSISTOR ecg 379
transistor. ECG 123AP
transistor ECG 332
ecg 126 transistor
TRANSISTOR ECG 69
TRANSISTOR Outlines
ecg 123 transistor
transistor pnp ecg 180
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