TRANSISTOR 1820 Search Results

TRANSISTOR 1820 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1820 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
486DX-CPU Abstract: tamagawa 486DX transistors mos retrograde well 0.35 Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling	Original		PDF
IN5817 schottky diode symbol Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222 Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small	Original	TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222	PDF
SS TRANSISTOR Abstract: No abstract text available Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small	Original	TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR	PDF
TRANSISTOR J477 Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z	PDF
SC6210 Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor	Original	M3D109 PBSS4350X SC-62) SCA76 R75/03/pp12 SC6210 Sc-6210 PBSS4350X PBSS5350X PBSS5350	PDF
s43 npn transistor Abstract: mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA	Original	M3D109 PBSS4350X SC-62) SCA75 613514/01/pp12 s43 npn transistor mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43	PDF
TRANSISTOR J477 Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17 Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor	Original	M3D109 PBSS4350X SC-62) SCA76 R75/03/pp12	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6	PDF
SOT89 S43 Abstract: S43 sot89 PBSS4350X PBSS5350X marking S43 mle180 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor	Original	M3D109 PBSS4350X SC-62) SCA75 R75/02/pp11 SOT89 S43 S43 sot89 PBSS4350X PBSS5350X marking S43 mle180	PDF
transistor j241 Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448 Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448	PDF
transistor j307 Abstract: j352 sk063 Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to	Original	AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063	PDF
C5750X7S2A106M Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 C5750X7S2A106M	PDF

NI-880XS-2 Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.	Original	AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD	PDF
c5750x7s2a106m Abstract: AD255A mosfet mttf aft20p06 Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.	Original	AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.	Original	AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,	PDF
AFT18S230S Abstract: MXC 037 ATC100B1R2BT AFT18S230SR3 Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 0, 8/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 MXC 037 ATC100B1R2BT AFT18S230SR3	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)	PDF
mosfet mttf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3 mosfet mttf	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.	Original	AFT18S230S AFT18S230SR3	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
B1219 Abstract: AN 6752 Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor	OCR Scan	2PD1820A 2PD1820A B1219A 115002/00/02/pp8 B1219 AN 6752	PDF
1219a Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2PB1219A PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 Philips Sem iconductors 1999 Apr 12 PHILIPS PHILIPS Philips Semiconductors Product specification 2PB1219A PNP general purpose transistor	OCR Scan	2PB1219A 2PB1219A 115002/00/03/pp8 1219a	PDF

TRANSISTOR 1820 Search Results

TRANSISTOR 1820 Result Highlights (5)

TRANSISTOR 1820 Datasheets Context Search

rjh3047

486DX-CPU

IN5817 schottky diode symbol

SS TRANSISTOR

TRANSISTOR J477

SC6210

s43 npn transistor

TRANSISTOR J477

Untitled

Untitled

SOT89 S43

transistor j241

transistor j307

C5750X7S2A106M

NI-880XS-2

c5750x7s2a106m

Untitled

AFT18S230S

Untitled

mosfet mttf

Untitled

2sb504

B1219

1219a