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    TRANSISTOR 1502 NPN Search Results

    TRANSISTOR 1502 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR 1502 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ps3 power supply

    Abstract: PICOR PI2007-00-QEIG DTC114EUAT106 zener diode 6.8v BZX3 PI2007 2SA1579T106R BZX384-B6V8 FJV1845 IRF7853PBF
    Text:  PI2007-EVAL1 Cool-ORing Series PI2007-EVAL1 48V Bus High Side Active ORing Evaluation Board User Guide ® Content Cool-ORing Series Page Introduction . 1 Product Description . 2


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    PDF PI2007-EVAL1 PI2007-EVAL1 ps3 power supply PICOR PI2007-00-QEIG DTC114EUAT106 zener diode 6.8v BZX3 PI2007 2SA1579T106R BZX384-B6V8 FJV1845 IRF7853PBF

    DTC114EUAT106

    Abstract: PS3 power supply zener diode 6.8v PI2007 2SA1579T106R BZX384-B6V8 FJV1845 IRF7853PBF PMEG3005EJ VICOR REGULATOR SCHEMATIC
    Text:  PI2007-EVAL1 Cool-ORing Series PI2007-EVAL1 48V Bus High Side Active ORing Evaluation Board User Guide Content Page Cool-ORing™ Series Introduction . 1 Product Description . 2


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    PDF PI2007-EVAL1 PI2007-EVAL1 DTC114EUAT106 PS3 power supply zener diode 6.8v PI2007 2SA1579T106R BZX384-B6V8 FJV1845 IRF7853PBF PMEG3005EJ VICOR REGULATOR SCHEMATIC

    Untitled

    Abstract: No abstract text available
    Text:  PI2161-EVAL1  Series PI2161-EVAL1 60V/12A High Side High Voltage Load Disconnect Switch Evaluation Board User Guide Series Content Page Introduction . 1 Product Description . 2


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    PDF PI2161-EVAL1 PI2161-EVAL1 0V/12A

    ps2 power supply

    Abstract: PI2127-EVAL1 PI2127 ps3 power supply BZX384-B6V8 FJV1845 PI2127-01-LGIZ LTST-C191
    Text:  PI2127-EVAL1 Cool ORing Series PI2127-EVAL1 60V/12A Full-Function High Side Active ORing Evaluation Board User Guide Content Cool-ORing® Series Page Introduction . 1 Product Description . 2


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    PDF PI2127-EVAL1 PI2127-EVAL1 0V/12A ps2 power supply PI2127 ps3 power supply BZX384-B6V8 FJV1845 PI2127-01-LGIZ LTST-C191

    MUN5331DW1T1

    Abstract: LM3661TL-1.25
    Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF MUN5311DW1T1 OT-363 MUN5331DW1T1 LM3661TL-1.25

    pulse generator MC14001

    Abstract: MOV surge protection circuit diagram ic mc14001 mc14001 SCR 2N3906 applications zener diode mv 13 GE mov GE Transient Voltage Suppression Manual GE MOV varistor motorola 1w zener diodes AR450
    Text: AR450 — CHARACTERIZING OVERVOLTAGE TRANSIENT SUPPRESSORS Prepared by Al Pshaenich Motorola Power Products Division The use of overvoltage transient suppressors for protecting electronic equipment is prudent and economically justified. For relatively low cost, expensive circuits can be


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    PDF AR450 AN843. AN784. AN879. EB-106. pulse generator MC14001 MOV surge protection circuit diagram ic mc14001 mc14001 SCR 2N3906 applications zener diode mv 13 GE mov GE Transient Voltage Suppression Manual GE MOV varistor motorola 1w zener diodes

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


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    PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    wireless charging through microwaves

    Abstract: design ideas MPQ6700 schematic weigh scale low cost Digital Weighing Scale schematic woodward MPQ6700 equivalent schematic weigh scale edn design ideas BUT15
    Text: design ideas Edited by Bill Travis and Anne Watson Swager Circuit yields accurate absolute values Marco Pisani, Istituto di Metrologia G Colonnetti, Turin, Italy he circuit in Figure 1 delivers the VIN + absolute value of the input Figure 1 IC1 signal with an accuracy better


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    PDF 10/ln sec/4400 wireless charging through microwaves design ideas MPQ6700 schematic weigh scale low cost Digital Weighing Scale schematic woodward MPQ6700 equivalent schematic weigh scale edn design ideas BUT15

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


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    PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


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    PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


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    PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


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    PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009

    transistor f 506

    Abstract: No abstract text available
    Text: TOSHIBA RN1501 ~ R N 1 506 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1501, RN1502, RN1503, RN1504, RN1505, RIMI 506 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1.6 - 0.1


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    PDF RN1501 RN1501, RN1502, RN1503, RN1504, RN1505, RN2501-EN2506 RN1501 RN1502 RN1503 transistor f 506

    philips ecg master replacement guide

    Abstract: ecg semiconductor replacement guide 7-segment 74ls47 74C925 TRANSISTOR REPLACEMENT ECG ecg replacement guide ECG SEMICONDUCTOR philips ecg replacement guide ecg master replacement guide BCD-TO-7-SEGMENT DECODER
    Text: PHILIPS E C G bbSBTHfl 0002503 0 ÌID » INC ~r~ 7 - 52 - 1 3 - 1 5 D isp lay Driver Integrated Circuits D isp lay Driver Integrated Circuits provide the necessary drive a n d /o r interfacing required to enable visible displays. D evices are available w h ich can supply the re­


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    PDF 74C48 74C925 10-Step philips ecg master replacement guide ecg semiconductor replacement guide 7-segment 74ls47 74C925 TRANSISTOR REPLACEMENT ECG ecg replacement guide ECG SEMICONDUCTOR philips ecg replacement guide ecg master replacement guide BCD-TO-7-SEGMENT DECODER

    philips ecg master replacement guide

    Abstract: ecg semiconductor replacement guide ECG SEMICONDUCTOR TRANSISTOR REPLACEMENT ECG TRANSISTOR REPLACEMENT GUIDE ecg replacement guide philips ecg replacement guide ic 74ls47 ecg semiconductors master replacement guide IC 74LS48
    Text: PHILIPS E C G INC ÌID » bbSBTHfl 0002503 ~r~ 7 - 52 - 1 3 - 1 5 D isp lay Driver Integrated Circuits D isp lay Driver Integrated Circuits provide the necessary drive a n d /o r interfacing required to enable visible displays. D evices are available w h ich can supply the re­


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    PDF T-52-13-15 74C48 74C925 74LS47 philips ecg master replacement guide ecg semiconductor replacement guide ECG SEMICONDUCTOR TRANSISTOR REPLACEMENT ECG TRANSISTOR REPLACEMENT GUIDE ecg replacement guide philips ecg replacement guide ic 74ls47 ecg semiconductors master replacement guide IC 74LS48

    R2M zener diode

    Abstract: ZENER R2M TRIO R27 Diode Zener R2M diagram for a 12v 25w power amplifier lm1201 notes R26S
    Text: LM1203 23 National ÆM Semiconductor LM1203 RGB Video Amplifier System General Description Features The LM1203 is a wideband video amplifier system intended for high resolution RGB color monitor applications. In addi­ tion to three matched video amplifiers, the LM1203 contains


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    PDF LM1203 LM1203 LM1203/LM1881 1203/LM R2M zener diode ZENER R2M TRIO R27 Diode Zener R2M diagram for a 12v 25w power amplifier lm1201 notes R26S

    transistor TT 3043

    Abstract: IJEAD
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


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    PDF NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD

    NE66100

    Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


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    PDF NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


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    PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139

    HA 12058

    Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor

    ha 1452 Amplifiers

    Abstract: 702 sot 23 100Z3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3

    702 TRANSISTOR

    Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE


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    PDF NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663