TRANSISTOR 150 A PNP Search Results

st smd diode marking code

Abstract: smd diode order marking code stmicroelectronics 2N5401HR NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 Operating temperature range -65°C to +200°C 2 3 1 2 3 TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

2N5401UB1

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■

2n5401 smd

Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■

2N5401HR

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N5401UB06

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

ESCC 5207-005

Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

SOC3810HRB

Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor

SOC3810HRB

Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics

Contextual Info: MJH11017 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400

JANSR2N5401UB

Abstract: 2N5401UB06 J2N5401UB1
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

POWER TRANSISTOR TO-220

Abstract: MJE9780 hFE is transistor to220 transistor TO-220 Outline Dimensions
Contextual Info: MJE9780 PNP SILICON POWER TRANSISTOR 3.0 AMPS, 150 VOLTS JEDEC TO-220 CASE DESCRIPTION: The Central Semiconductor MJE9780 is a PNP power transistor packaged in a TO-220 case, designed for CRT output applications. MAXIMUM RATINGS TA=25°C unless otherwise noted

DTA114GE

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS TJ = 25°C unless otherwise noted

2N2905

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N2905At

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

Contextual Info: m 2N6107 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6107 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -70 V P diss 40 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C

2N6132

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

2SA835

Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.

Contextual Info: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kQ Base-Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS T j = 25°C unless otherwise noted

marking A1 TRANSISTOR

Abstract: 2PA1576 2PA1576Q 2PA1576R 2PA1576S 2PC4081 transistor sc-70 marking codes
Contextual Info: 2PA1576 PNP general-purpose transistor Rev. 05 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT323 SC-70 plastic package. The NPN complement is 2PC4081. 1.2 Features • Low current (max. 150 mA)

Contextual Info: MJH11021 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400

marking A1 TRANSISTOR

Abstract: 2PA1774 2PC4617 2PC4617Q 2PC4617R 2PC4617S SC-75
Contextual Info: 2PC4617 NPN general-purpose transistor Rev. 04 — 25 November 2004 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT416 SC-75 plastic package. The PNP complement is 2PA1774. 1.2 Features • Low current (max. 150 mA)