TRANSISTOR 143 Search Results

ADE-208-1439A

Abstract: 2SC5700 2SC5757 HTT1115E DSA003640 hitachi ic
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor ADE-208-1439A Z Rev.1 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 702 smd transistor FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor smd marking KA smd marking 702 2SC5700 2SC5757
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

transistor marking T2

Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
Contextual Info: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

2SC2150

Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter

marking code ER sot 143

Abstract: transistor D95 TRANSISTOR C
Contextual Info: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

2SC4225

Abstract: 9015 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.

2SC3356

Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

2SA1424

Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

NEC NF 932

Abstract: 2SC4092
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.

Contextual Info: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.