TRANSISTOR 1402 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSC5019 TRANSISTOR NPN 1.EMITTER FEATURES z Low VCE(sat) z General Purpose Amplifier Transistor 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor D 4515

Abstract: condenser microphone N-Channel JFET transistor TF218
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC TF218 is a N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. „ FEATURES

TF218

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. „ FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics.

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: PBSS4420D PBSS5420D MARKING d4 SMD PNP TRANSISTOR MARKING d4 SMD npN TRANSISTOR
Contextual Info: PBSS4420D 20 V, 4 A NPN low VCEsat BISS transistor Rev. 01 — 21 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5420D.

TF215-D5

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone. „ FEATURES * Good voltage characteristics and transient characteristics.

14027

Abstract: transistor smd yw PBSS4420D PBSS5420D
Contextual Info: PBSS5420D 20 V, 4 A PNP low VCEsat BISS transistor Rev. 01 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

TF218

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SC2489

Abstract: 2SA1065 hfe1 2SC248
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION •Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS

capacitor Microphones

Abstract: TF202
Contextual Info: UTC TF202 N-CHANNEL SILICON TRANSISTOR CAPACITOR MICROPHONE APPLICATIONS FEATURES *Ultrasmall-sized package permitting TF202 appliedses to be made small and slim. *Especially suited for use in audio,telephone capacitor microphones. *Excellent voltage charactristic.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION „ DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION „ DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.  FEATURES * Adoption of FBET, MBIT processes

2SD1669

Abstract: 2SB1136
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -6A ·Complement to Type 2SD1669

2SA1065

Abstract: 2SC2489 transistor 2sa1065
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 APPLICATIONS

2SB1134

Abstract: 2SD1667 transistor 2sb1134
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1134 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -3A ·Complement to Type 2SD1667

2SA1290

Abstract: 2SC3254
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3254 DESCRIPTION •Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1290 APPLICATIONS ·Various inductance lamp drivers for electrical equipment

2SD1624

Abstract: transistor marking DG npn high voltage transistor SOT-89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHIG APPLICATION „ DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes