TRANSISTOR 136 138 140 Search Results

TRANSISTOR 136 138 140 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 136 138 140 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
BD140 application circuits circuits Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138 Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138	PDF
transistor 136 138 140 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	MS1009 MS1009 136MHz 160MHz 175MHz transistor 136 138 140	PDF
MS1009 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	MS1009 MS1009 136MHz 160MHz 175MHz	PDF
transistor 136 138 140 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	MS1009 MS1009 136MHz 160MHz 175MHz transistor 136 138 140	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC	Original	2N5031 To-72 2N5031	PDF
2N5031 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC	Original	2N5031 To-72 2N5031	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC	Original	2N5031 To-72 Vdc21\| 2N5031	PDF
2N5031 Abstract: MSC1303 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC	Original	2N5031 To-72 MSC1303 2N5031	PDF
bd140 pin out Abstract: BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140 Text: ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	BD136 BD138 BD140 BD140-10 225AA r14525 BD136/D bd140 pin out BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140	PDF
BD140-10 Abstract: BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137 Text: ON Semiconductort BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	BD136/D r14525 BD140-10 BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137	PDF
current fed push pull topology Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors	Original	50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors	PDF
8D139 Abstract: bd136 M/BTA 8d139 BD136-BD138-BD140 TRANSISTOR SE 140 transistor bd135 BD135/BD135/8D139 Text: B D 136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Com plem ent to BD135, BD137 and 8D139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage: BD136	OCR Scan	BD135, BD137 8D139 O-126 BD136 BD138 BD140 bd136 M/BTA 8d139 BD136-BD138-BD140 TRANSISTOR SE 140 transistor bd135 BD135/BD135/8D139	PDF
BD138 Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136 Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136	OCR Scan	BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD138 bd140 Complement bd139 Complement transistor BD140 BD135 BD140 power transistor bd136	PDF

BD 139 transistor Abstract: TRANSISTOR BD 136 BDI36 BD140 BD140-10 BDI38 BD 140 transistor 136 138 140 BD136 transistor bd 138 Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 B D 140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. •	OCR Scan	BD136/D BD136 BD138 BD140 O-225AA BD 139 transistor TRANSISTOR BD 136 BDI36 BD140-10 BDI38 BD 140 transistor 136 138 140 transistor bd 138	PDF
8d136 Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133 Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6	OCR Scan	8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133	PDF
transistor BD 141 Abstract: No abstract text available Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126	OCR Scan	BD136. BD138, BD140 6235bQS BD138. transistor BD 141	PDF
10 watt power transistor bd Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc	OCR Scan	BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140	PDF
C2021M Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240 Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)	OCR Scan	2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240	PDF
BD 266 S Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6 Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 \| BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6	PDF
WJA31 Abstract: WJ-A31-1 10-2000MHz Text: WJ-A31-1 /SMA31-1 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE: < 3.5 dB TYP. ♦ LOW VSWR : 1.5.1 (TYP.) Outline Drawings A31-1 Specifications* 0.200 (5.08) Guaranteed Typical Characteristics 0° to 50°C 10-2000 M Hz	OCR Scan	WJ-A31-1 /SMA31-1 A31-1 MILLIMETERS16 WJA31 10-2000MHz	PDF
Untitled Abstract: No abstract text available Text: uuU A31-1 /SMA31-1 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE: < 3.5 dB TYP. ♦ LOW VSWR : 1.5.1 (TYP.) Outline Drawings A31-1 Specifications5' Characteristics Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max.)	OCR Scan	A31-1 /SMA31-1 A31-1 50-OHM 1-800-WJ1-4401	PDF
WJ-A28-2 Abstract: c 4977 transistor TRANSISTOR 13000 WJ-CA28 Text: WJ-A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: < 1.4:1 (TYP.) Outline Drawings	OCR Scan	WJ-A28-2 SMA28-2 A28-2 c 4977 transistor TRANSISTOR 13000 WJ-CA28	PDF
BFG96 Abstract: No abstract text available Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96	PDF

TRANSISTOR 136 138 140 Search Results

TRANSISTOR 136 138 140 Result Highlights (5)

TRANSISTOR 136 138 140 Datasheets Context Search

pin configuration transistor bd140

BD140 application circuits circuits

transistor 136 138 140

MS1009

transistor 136 138 140

Untitled

2N5031

Untitled

2N5031

bd140 pin out

BD140-10

current fed push pull topology

8D139

BD138

BD 139 transistor

8d136

transistor BD 141

10 watt power transistor bd

C2021M

BD 266 S

WJA31

Untitled

WJ-A28-2

BFG96