TRANSISTOR 1308 Search Results
TRANSISTOR 1308 Datasheets Context Search
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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IE-02Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface |
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PHD3N20L IE-02 | |
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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ds7830j
Abstract: DS7830 J14A DUAL Differential Line DRIVER
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DS7830 DS7830 ds7830j J14A DUAL Differential Line DRIVER | |
Contextual Info: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al |
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DS7830/DS8830 TL/F/5799-7 TL/F/5799-1 | |
DS7830J
Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
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DS7830 DS8830 DS7830J C1996 DS7830W DS8830N J14A N14A DS8730 DS7830J-883 | |
transistor jp
Abstract: 2SD1308 2SB974 2T54 h13k
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2SD1308 2SD1308Ã 2SB974 Tc-25 transistor jp 2SD1308 2SB974 2T54 h13k | |
Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating |
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T0-226AA 462fc | |
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
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SPRAGUE 30DContextual Info: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of |
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505F100C TE1411 405F100C 106F100D 156F100D 206F100D 256F100D 306F100D TE1501 30D205F150B SPRAGUE 30D | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 | |
d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
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2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460 | |
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Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter |
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FJC1308 FJC1963 OT-89 FJC1308 | |
Transistor 1308
Abstract: FJC1308 FJC1963
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FJC1308 FJC1963 OT-89 FJC1308 Transistor 1308 FJC1963 | |
E 94733
Abstract: AH-1 SOT23
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BFT92 Q62702-F1050 OT-23 900MHz E 94733 AH-1 SOT23 | |
Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures |
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bb53c 002S3bb BFT25A BFT25A | |
Contextual Info: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963. |
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2SB1308 2SD1963 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. | |
mje 3003
Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
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bb53ci31 DDE53bb BFT25A BFT25A mje 3003 mje 1303 transistor Bf 444 369-42 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291 | |
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
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ladungspumpe
Abstract: spannungsregelung drossel 13041 TRANSISTOR schaltregler Spannungsregler
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MSK5810RH
Abstract: MSK5800RH
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RH1573 MSK5800RH, 5810RH, 5820RH, 5821RH, 5822RH, 5823RH, 5824RH, 5825RH, 5826RH, MSK5810RH MSK5800RH | |
MSK5910RHContextual Info: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ Startup Voltage Tracking With MSK5910RH and 5922RH Low Dropout Radiation Hardened Regulators By Paul Musil, MS Kennedy Corp.; 10/2007 |
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MSK5910RH 5922RH MSK5922RH |