TRANSISTOR 13003L Search Results

TRANSISTOR 13003L Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 13003L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR 13000 Abstract: 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203 Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L General Description Features The APT13003L series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. • · · High Switching Speed	Original	PDF	APT13003L APT13003L TRANSISTOR 13000 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203
13002l Abstract: 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	13002L 13003L O-92L ST13002L ST13003L Range03L 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l
ST-13002 Abstract: 13002l 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	13002L 13003L O-92L ST13002L ST13003L Ran3003L ST-13002 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics
transistor 13003L Abstract: APT13003LZ Text: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2	Original	PDF	APT13003L MIL-STD-202, 200mg DS36306 transistor 13003L APT13003LZ