TRANSISTOR 12W 14 Search Results

TRANSISTOR 12W 14 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 12W 14 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MOSFET mark J7 Abstract: 78s12 RD12MVS 043mm transistor t06 19 Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19	PDF
a 1757 transistor Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758	PDF
transistor+SMD+12W+MOSFET Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET	PDF
a 1757 transistor Abstract: 78s12 GRM40 RD12MVS1 T112 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112	PDF
mosfet marking 12W Abstract: 12w marking GRM40 RD12MVS1 T112 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112	PDF
a 1757 transistor Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208	PDF
78s12 Abstract: RD12MVS1-101 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101	PDF
AP3970P-G1 Abstract: 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3968 AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS Contextual Info: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3968/69/70/70S consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 12W output power. Typical applications	Original	AP3968/69/70/70S AP3968 AP3970P-G1 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS	PDF
transistor J9 Abstract: 12w 66 transistor transistor 60 12w 12w 99 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS	Original	MS2218 MS2218 transistor J9 12w 66 transistor transistor 60 12w 12w 99	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS	Original	MS2218 MS2218	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS	Original	MS2218 MS2218	PDF
MS1553 Abstract: 12w 99 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1553 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED	Original	MS1553 MS1553 12w 99	PDF
12w transistor Abstract: RF NPN POWER TRANSISTOR 60w Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED	Original	MS1536 MS1536 12w transistor RF NPN POWER TRANSISTOR 60w	PDF
MS1536 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 F RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED	Original	MS1536 MS1536	PDF

P04 transistor Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted	OCR Scan	M57789 889-915MHz, P04 transistor transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters	PDF
transistor 12w Abstract: M57789 Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted	OCR Scan	M57789 889-915MHz, transistor 12w M57789	PDF
Contextual Info: ^24^62^ DD1 7 2 6 3 547 • MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO BLOCK DIAGRAM 1 . œHh PIN : P in RF INPUT Vcci 1st. DC SUPPLY <$VBB BASE BIAS SUPPLY ®VCC2 2nd. DC SUPPLY ®Po RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS 0 0 = 2 5 ^ unless otherwise noted	OCR Scan	M57789 889-915MHz,	PDF
Contextual Info: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted	OCR Scan	M57789 890-915MHz, DDlb272	PDF
118-136 Abstract: 118-136 mhz Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:	Original	MS1329 MS1629 118-136 118-136 mhz	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
20 watts transistor s-band Abstract: j948 Contextual Info: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF	Original	3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948	PDF
2731GN-200M Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374 Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF	Original	2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374	PDF
transistor d2118 Abstract: IB1011S190 d2118 D2118 transistor Contextual Info: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this	Original	IB1011S190 IB1011S190 IB1011S190-REV-NC-DS-REV-D transistor d2118 d2118 D2118 transistor	PDF
tda2030 Abstract: amplifier circuit Contextual Info: ÍZ J S C S -1H 0 M S 0 N TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power d = 0.5% at 14V/4Q; at ± 14V	OCR Scan	TDA2030 TDA2030 DIN45500) 00L44G4 amplifier circuit	PDF

TRANSISTOR 12W 14 Search Results

TRANSISTOR 12W 14 Result Highlights (5)

TRANSISTOR 12W 14 Datasheets Context Search

MOSFET mark J7

a 1757 transistor

transistor+SMD+12W+MOSFET

a 1757 transistor

mosfet marking 12W

a 1757 transistor

78s12

AP3970P-G1

transistor J9

MS1553

12w transistor

MS1536

P04 transistor

transistor 12w

118-136

MRF660

20 watts transistor s-band

2731GN-200M

transistor d2118

tda2030