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    TRANSISTOR 12V 1A NPN Search Results

    TRANSISTOR 12V 1A NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 12V 1A NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR MARKING 1d3

    Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


    Original     		ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F TRANSISTOR MARKING 1d3 ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF PDF

    2SC5249

    Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor PDF

    2SC5249

    Abstract: FM20
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 PDF

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		ZXTC6717MC 100mV -140mV DS31926 IC 630 PDF

    ZXTN25012EZ

    Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
    Text: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation


    Original     		ZXTN25012EZ ZXTP25012EZ D-81541 ZXTN25012EZ TS16949 ZXTN25012EZTA ZXTP25012EZ PDF

    zxtn25012efh

    Abstract: transistor 1.25W
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		ZXTN25012EFH zxtn25012efh transistor 1.25W PDF

    Untitled

    Abstract: No abstract text available
    Text: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance


    Original     		ZUMT717 OT323 -215mV J-STD-020 500mW ZUMT617 DS33339 PDF

    ZXTN25012EFL

    Abstract: TS16949 ZXTN25012EFLTA
    Text: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse


    Original     		ZXTN25012EFL 350mW ZXTN25012EFLTA D-81541 ZXTN25012EFL TS16949 ZXTN25012EFLTA PDF

    IC 630

    Abstract: marking DA1
    Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance


    Original     		ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


    Original     		ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653 PDF

    2SC3851

    Abstract: 2SC3851A FM20 DSA0016507
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ O220F) 2SC3851 2SC3851A FM20 DSA0016507 PDF

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


    Original     		2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 2SC4495 FM20 PDF

    2SC3851

    Abstract: 2SC3851A FM20
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ 2SC3851 2SC3851A FM20 PDF

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


    Original     		2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 85typ 2SC4495 FM20 PDF

    bc 617 transistor equivalent

    Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
    Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP


    Original     		FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT720 PDF

    transistor 12v 1A NPN

    Abstract: ap15* regulator AP1502
    Text: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL „ Features „ General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable


    Original     		AP1502 200KHz, AP1502 04REF 041REF transistor 12v 1A NPN ap15* regulator PDF

    NPN Transistor 600V

    Abstract: NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications.


    Original     		2SC5249 NPN Transistor 600V NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN PDF

    2SC3927

    Abstract: transistor 800V 1A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3927 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 550V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose


    Original     		2SC3927 2SC3927 transistor 800V 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time


    Original     		FJP5304D O-220 FJP5304D PDF

    ELECTRONIC BALLAST 12v

    Abstract: FJP5304D TRANSISTOR hFE-100
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose „ ORDERING INFORMATION Ordering Number


    Original     		2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose Lead-free: 2SC3834L Halogen-free: 2SC3834G


    Original     		2SC3834 2SC3834 2SC3834L 2SC3834G 2SC3834-TA3-T 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 PDF

    transistor 12v 1A NPN

    Abstract: 2sc3834 Silicon NPN Epitaxial Planar Type
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose Lead-free: 2SC3834L Halogen-free: 2SC3834G


    Original     		2SC3834 2SC3834 2SC3834L 2SC3834G 2SC3834-TA3-T 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 transistor 12v 1A NPN Silicon NPN Epitaxial Planar Type PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR  DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.  FEATURES * Humidifier, DC-DC converter, and general purpose  ORDERING INFORMATION


    Original     		2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 2SC3834L-T3P-T 2SC3834G-T3P-T QW-R203-026 PDF