TRANSISTOR 1243 Search Results

Contextual Info: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­

BUX37

Abstract: transistor da 307 dg173 TO-204AA transistor
Contextual Info: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W

d 2539 transistor

Abstract: QCA50AA120
Contextual Info: TRANSISTOR MODULE QCA50ÄA120 UL;E76102 M Q C A 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

sqd35J

Contextual Info: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)

Contextual Info: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

QF20AA60

Abstract: QF20AA40 SANREX QF20AA60
Contextual Info: TRANSISTOR M O D U L E t h r e e p h a s e s b r id g e t y p e QF20AA40/60 Q F 2 0 A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

MMBT2222A

Abstract: PMBT2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA

7E SOT23 NXP

Abstract: 771-MMBTA92215 MAM256
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA

transistor marking zg

Abstract: PBSS4320T PBSS5320T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES

PBSS5140T

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5140T 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jul 20 2004 Jan 07 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T QUICK REFERENCE DATA FEATURES

MMBTA42

Abstract: MMBTA92 transistor marking code 7e IBM type 1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

MMBT2222A

Abstract: PMBT2907A transistor mmbt2222a
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN