TRANSISTOR 1240 Search Results

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

NP48N055CHE

Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

transistor BC 339

Abstract: transistor BC 336 BC190 bc 339 transistor BC 55 MC 340 transistor transistor bc 337 BC 170 transistor capacite 335
Contextual Info: NPN ÇILICON TRANSISTOR TRANSISTOR NPN S ILIC IU M Switching and amplifier Available on A and B groups 64 V V CEO Commutation et amplification Utifisabfe pour les groupes A et B 200 mA 'c m i 125-260 A h21e 2 mA-5 V 1240-500 B Case TO-18 • See outline drawing ÇB-6 on last pages

BCX17

Abstract: BCX19
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCX19 NPN general purpose transistor Product specification Supersedes data of 2000 Jul 28 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BCX19

Abstract: BCX17 BCX19 NXP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCX19 NPN general purpose transistor Product data sheet Supersedes data of 2000 Jul 28 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA PIN

transistor b 1238

Abstract: fld pcb
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCX19 NPN general purpose transistor Product data sheet Supersedes data of 2000 Jul 28 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 PINNING FEATURES • High current 500 mA PIN • Low voltage (45 V).

Contextual Info: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for

BLF188XR NXP

Abstract: blf188
Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

R1200

Abstract: diode v3e
Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm

smd JH transistor

Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

250 B 340 smd Transistor

Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

diode D83

Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
Contextual Info: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2DI100M-050

Abstract: welding inverter 100A transistor 1240
Contextual Info: 2DI100M-050 100A FUJI POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: パワートランジスタモジュール POWER TRANSISTOR MODULE 特長 ：Features 特長： hFE が高い が高い High DC Current Gain 高速ｽｲｯﾁﾝｸﾞ