RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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2sd1395
Abstract: No abstract text available
Text: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]
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EN1221C
2SD1395
2010C
2SD1395]
2sd1395
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2SD1395
Abstract: No abstract text available
Text: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]
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EN1221C
2SD1395
2010C
2SD1395]
2SD1395
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]
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EN1221C
2SD1395
2010C
2SD1395]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]
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EN1221C
2SD1395
2010C
2SD1395]
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MPS4124 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE 25 Vdc Collector −Base Voltage VCB 30 Vdc Emitter −Base Voltage VEB 5.0 Vdc Collector Current — Continuous IC 200 mAdc
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MPS4124
O-226AA)
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700B
Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E
Text: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF
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PD57018-E
Hz/28
PowerSO-10RF
PowerSO-10RF.
700B
AN1294
J-STD-020B
PD57018-E
PD57018S-E
PD57018STR-E
PD57018TR-E
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Untitled
Abstract: No abstract text available
Text: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF
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PD57018-E
Hz/28
PowerSO-10RF
PowerSO-10RF.
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE sat PNP TO-3P-3L http://onsemi.com Features • • • Large current capacitance Wide SOA and high durability against breakdown Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0188B
2SB817C
A0188-4/4
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PD57018S-E
Abstract: 700B AN1294 J-STD-020B PD57018 PD57018-E PD57018S PD57018STR-E PD57018TR-E
Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF
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PD57018-E
PD57018S-E
Hz/28
PowerSO-10RF
PowerSO-10RF.
PD57018S-E
700B
AN1294
J-STD-020B
PD57018
PD57018-E
PD57018S
PD57018STR-E
PD57018TR-E
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k 246 transistor fet
Abstract: subthreshold logic
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9675-55
OT404
1E-02
k 246 transistor fet
subthreshold logic
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Untitled
Abstract: No abstract text available
Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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1090-80L
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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transistor ITT 2907
Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz
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HFA3101
HFA3101
10GHz
15dBc
28dBc
22dBc
76MHz
825MHz
50MHz
transistor ITT 2907
transistor itt 975
MC 931 transistor
24GHz UHF transistor
band pass filter 2GHz
7812 a
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Untitled
Abstract: No abstract text available
Text: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221
RN1221
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toshiba ta 1222
Abstract: TRANSISTOR 1221 RN1223
Text: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221--2227
55MAX.
toshiba ta 1222
TRANSISTOR 1221
RN1223
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB906 LOW FREQUENCY POWER AMPLIFIER • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSD 1221 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 60 V C ollecto r E m itter Voltage
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KSB906
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2SD1395
Abstract: No abstract text available
Text: Ordering number:EN1221C _2SD1395 N0.I22IC NPN Triple Diffused P lanar Silicon Darlington Transistor. SAMYO. i Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers .
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1221C
2SD1395
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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transistor bf 193
Abstract: Siemens ESP 100
Text: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration
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900MHz
Q62702-F1282
OT-143
transistor bf 193
Siemens ESP 100
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2SC3544
Abstract: IC sn 74 ls 2000
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry
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NE944
IS12I
IS12S21I
b427525
00L5770
2SC3544
IC sn 74 ls 2000
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