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    TRANSISTOR 10N120BND Search Results

    TRANSISTOR 10N120BND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 10N120BND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10n120bnd

    Abstract: mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay HGTG10N120BND LD26 TA49189
    Contextual Info: HGTG10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay LD26 TA49189 PDF

    10n120bnd

    Abstract: 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 HGTG10N120BND TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR
    Contextual Info: HGTG10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR PDF

    10N120BND

    Contextual Info: HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10N120BND PDF

    HGTG10N120BND

    Abstract: 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR
    Contextual Info: HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR PDF

    10N120BND

    Abstract: 10n120bnd equivalent
    Contextual Info: HGTG10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


    OCR Scan     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 1-800-4-HARRIS 10N120BND 10n120bnd equivalent PDF

    10N120BND

    Abstract: mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238
    Contextual Info: HGTG10N120BND Semiconductor D a ta S h e e t J a n u a ry 1999 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


    OCR Scan     		HGTG10N120BND HGTG10N120BND TA49290. TA49189. 1-800-4-HARRIS 10N120BND mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF