TRANSISTOR 10A 100V Search Results

CEPF630

Abstract: CEFF630 CEBF630
Contextual Info: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

2SB897

Abstract: 2SD1210 darlington power transistor 10a power darlington transistor 10A TRANSISTOR 2SB897
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Low Collector Saturation Voltage: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 APPLICATIONS

diode r207

Abstract: UTC SILICON PNP 3A TRANSISTORS PNP 100V 2A UP1853
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A continuous current , up to 10A peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10A * PD = 3W

UP1853G-AA3-R

Abstract: UTC SILICON PNP 3A TRANSISTORS UP1853
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS  FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

MJ11018

Abstract: MJ11017
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A

MJ11019

Abstract: MJ11020
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -200V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Vce-200V 20a

Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power

transistor 2n3772

Abstract: 2N3772
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

BUZ45B

Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Contextual Info: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as

2SB1079

Abstract: 2SD1559
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS

2SB1100

Abstract: darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

TRANSISTOR TC 100

Abstract: BUV50 transistor TC 10 TP30S
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 DESCRIPTION •High Current Capability ·Low Collector Saturation Voltage: VCE sat = 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power

transistor BD245

Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current

ZXTN2011Z

Contextual Info: A Product Line of Diodes Incorporated ZXTN2011Z Green 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 100V IC = 4.5A high Continuous Current ICM = 10A Peak Pulse Current

FZT953TA

Contextual Info: A Product Line of Diodes Incorporated FZT953 Green 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -100V IC = -5A High Continuous Collector Current ICM = -10A Peak Pulse Current

NPN Transistor 10A 100V

Abstract: darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A

npn DARLINGTON 10A

Abstract: darlington power transistor 10a darlington power transistor MJ11022
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A