CEPF630
Abstract: CEFF630 CEBF630
Text: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEPF630/CEBF630
CEFF630
CEPF630
CEBF630
O-263
O-220
O-220F
O-220/263
CEPF630
CEFF630
CEBF630
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2SB897
Abstract: 2SD1210 darlington power transistor 10a power darlington transistor 10A TRANSISTOR 2SB897
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Low Collector Saturation Voltage: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 APPLICATIONS
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2SD1210
-10mA,
-25mA
-100V,
-25mA;
2SB897
2SD1210
darlington power transistor 10a
power darlington transistor 10A
TRANSISTOR 2SB897
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diode r207
Abstract: UTC SILICON PNP 3A TRANSISTORS PNP 100V 2A UP1853
Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 5A continuous current , up to 10A peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10A * PD = 3W
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UP1853
UP1853L
UP1853-AA3-R
UP1853L-AA3-R
UP1853-AA3-T
UP1853L-AA3-T
OT-223
diode r207
UTC SILICON PNP 3A TRANSISTORS
PNP 100V 2A
UP1853
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UP1853G-AA3-R
Abstract: UTC SILICON PNP 3A TRANSISTORS UP1853
Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W
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UP1853
UP1853G-AA3-R
OT-223
QW-R207-019
UP1853G-AA3-R
UTC SILICON PNP 3A TRANSISTORS
UP1853
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W
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UP1853
UP1853L-AA3-R
UP1853G-AA3-R
OT-223
QW-R207-019
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W
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UP1853
UP1853G-AA3-R
OT-223
QW-R207-019
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MJ11018
Abstract: MJ11017
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A
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-150V
MJ11018
-100V;
MJ11018
MJ11017
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MJ11019
Abstract: MJ11020
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -200V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A
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-200V
MJ11020
-100V,
-100V;
MJ11019
MJ11020
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Vce-200V 20a
Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power
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BUV22
Vce-200V 20a
200V transistor npn 10a
300V transistor npn 2a
BUV22 equivalent
BUV22
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transistor 2n3772
Abstract: 2N3772
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and
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2N3772
50kHz
transistor 2n3772
2N3772
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BUZ45B
Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as
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BUZ45B
BUZ45
TA17435.
BUZ45B
TA17435
BUZ-45B
transistor BUZ45
500V N-Channel MOSFET ID 29A
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2SB1079
Abstract: 2SD1559
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS
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-100V
2SD1559
-50mA
-20mA
-200mA
-100V,
2SB1079
2SD1559
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2SB1100
Abstract: darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS
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-100V
2SD1591
-25mA
-100V
-25mA,
2SB1100
darlington transistor for audio power application
darlington power transistor 10a
10A 100V darlington power transistor
2SD1591
transistor 10a 100v
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2SD1793
Abstract: ITO-220 TP10L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1793
ITO-220
TP10L10)
002IC
004IC
2SD1793
ITO-220
TP10L10
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2SD1793
Abstract: ITO-220 TP10L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1793
ITO-220
TP10L10)
002IC
004IC
2SD1793
ITO-220
TP10L10
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TRANSISTOR TC 100
Abstract: BUV50 transistor TC 10 TP30S
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 DESCRIPTION •High Current Capability ·Low Collector Saturation Voltage: VCE sat = 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power
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BUV50
TRANSISTOR TC 100
BUV50
transistor TC 10
TP30S
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transistor BD245
Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C
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BD245/A/B/C
BD245;
BD245A
BD245B;
BD245C
BD246/A/B/C
BD245
BD245B
transistor BD245
BD245C
BD245
BD245A
BD245 transistor
BD245B
BD246 EQUIVALENT
NPN Transistor VCEO 80V 100V
NPN Transistor 10A 70V
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZX5T953G
OT223
-100V
-90mV
AEC-Q101
OT223
J-STD-020
DS33425
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ZXTN2011Z
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN2011Z Green 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 100V IC = 4.5A high Continuous Current ICM = 10A Peak Pulse Current
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ZXTN2011Z
AEC-Q101
J-STD-020
ZXTN2011Z
DS33663
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FZT953TA
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT953 Green 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current
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FZT953
OT223
-100V
-115mV
FZT853
AEC-Q101
OT223
J-STD-020
FZT953
DS35942
FZT953TA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -100V IC = -5A High Continuous Collector Current ICM = -10A Peak Pulse Current
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ZXTP2013G
OT223
-100V
-90mV
AEC-Q101
DS33714
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NPN Transistor 10A 100V
Abstract: darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A
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MJ11017
Cycle10%
NPN Transistor 10A 100V
darlington power transistor
npn DARLINGTON 10A
MJ11017
MJ11018
NPN transistor Ic 50A td tr ts tf
npn darlington 150v 15a
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npn DARLINGTON 10A
Abstract: darlington power transistor 10a darlington power transistor MJ11022
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
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OCR Scan
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2SB1388/2SD2093
2SB1388
2SD2093
00V/10A
T03PML
c17D7b
3720-l/4
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