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    TRANSISTOR 1047 Search Results

    TRANSISTOR 1047 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1047 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO


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    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Symbol MMBTA92 Unit Collector −Emitter Voltage Rating


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    PDF MMBTA92LT1 MMBTA92

    AN9322

    Abstract: RFP70N06 ronan
    Text: A Combined Single Pulse and Repetitive UIS Rating System Application Note A rating system for Unclamped Inductive Switching in PowerMOS transistors already widely accepted and implemented on Intersil PowerMOS transistor data sheets can be applied to a wide range of applications very easily


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL level field-effect power transistor in a plastic envelope.


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    PDF PHP3055L T0220AB

    2SB817P

    Abstract: 2SD1047P ITO2169
    Text: Ordering number: ENN6572 2SB 817P : PN P Epitaxial Planar Silicon Transistor 2 S D 1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P Is a H Y O i 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Inter­


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    PDF ENN6572 2SB817P 2SD1047P 2SB817P 2SD1047P AF80W 2SD1047P] ITO2169

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.


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    PDF 90C00 50ams AN90C10 600/jtA 500/i

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A HF 331 transistor

    k 246 transistor fet

    Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


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    PDF BUK7675-55 SQT404 k 246 transistor fet transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor

    dds25

    Abstract: PHP3055
    Text: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF PHP3055L dds25 PHP3055

    d 1047 transistor

    Abstract: BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf
    Text: II DtiE d N AMER P HILIPS/DISCRETE 86D 0 1952* D 7 • oom no s 3 3 4*9 BLY92A * _ A_ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF bly92a OT-48/2. d 1047 transistor BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


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    PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    8060 transistor

    Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
    Text: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —


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    PDF MPS-H24 470pF 8060 transistor NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24

    BLX98

    Abstract: philips carbon film resistor carbon resistor WE VQE 24 E 2222 311 capacitor philips WE VQE 11 E RF NPN POWER TRANSISTOR C 10-50 GHZ 4322 057
    Text: bSE D 7 1 1 0 0 2 b D 0 b 3 5 S S TT3 • P H I N PH IL IP S BLX98 INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers o f television transposers and transmitters in band IV-V.


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    PDF 711002b D0b35SS BLX98 b35b0 BLX98 philips carbon film resistor carbon resistor WE VQE 24 E 2222 311 capacitor philips WE VQE 11 E RF NPN POWER TRANSISTOR C 10-50 GHZ 4322 057

    multi-emitter transistor

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E T> • bbSB'ni QDS^bSl TTH « A P X II BLX96 M A IN T E N A N C E T Y P E U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.


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    PDF BLX96 BLX98 multi-emitter transistor

    BLX98

    Abstract: BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor
    Text: N AMER P H I L I P S / D I S C R E T E M A I N T E N A N C E T YPE b^E D b b S 3 T 31 II • 0 D S T b 5 1 T T 4 ■ APX B L X 96 U.H.F. LINEAR PO W ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for


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    PDF 0DSTb51 BLX96 7z72543 BLX98 BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    d 1047 transistor

    Abstract: transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor
    Text: Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and linear amplification,


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    PDF PMST4401 OT323 PMST4403. PMST4401 OT323) LBB26 d 1047 transistor transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor 1548 b

    Abstract: transistor 1548 transistor D 1047
    Text: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    PDF Curren-14 5b4220S 00012b? transistor 1548 b transistor 1548 transistor D 1047