TRANSISTOR 1046 Search Results

TRANSISTOR 1046 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
BLF1046	Rochester Electronics LLC	BLF1046 - UHF Power LDMOS Transistor (Ampleon Die)
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR 1046 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NSL35TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO –35	Original	PDF	NSL35TT1 Res15
SILICON TRANSISTOR CORP Abstract: No abstract text available Text: ShE ]> SILICON TRANSISTOR CORP • B254022 □□00fl‘i2 20b « S T C SILICON TRANSISTOR CORPORATION ^ ^ Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.5 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	B254022 SNF20505 ST102 MIL-S-19500 SILICON TRANSISTOR CORP
Silicon Transistor Corp Abstract: 2950 transistor Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	2S4022 SNF40503 BreM0-078 ST102 MIL-S-19500 Silicon Transistor Corp 2950 transistor
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
SILICON TRANSISTOR CORP Abstract: No abstract text available Text: SILICON TRANSISTOR CORP Ô254GE2 G Q G O ' m SbE D TbT « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 200 VOLTS 0.11 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ202	OCR Scan	PDF	254GE2 STQ202 ST102 MIL-S-19500 SILICON TRANSISTOR CORP
SILICON TRANSISTOR CORP Abstract: No abstract text available Text: SILICON TRANSISTOR CORP fl2S4D22 □□□□‘ìflb <^3 « S T C 5bE D T -3 W S SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.9 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	fl2S4D22 SNF40409 O-258 ST102 MIL-S-19500 SILICON TRANSISTOR CORP
SILICON TRANSISTOR CORP Abstract: h a 431 transistor Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	SNF40404 ST102 MIL-S-19500 SILICON TRANSISTOR CORP h a 431 transistor
Untitled Abstract: No abstract text available Text: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL level field-effect power transistor in a plastic envelope.	OCR Scan	PDF	PHP3055L T0220AB
HF 331 transistor Abstract: No abstract text available Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	PDF	BLY92A HF 331 transistor
k 246 transistor fet Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	PDF	BUK7675-55 SQT404 k 246 transistor fet transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
dds25 Abstract: PHP3055 Text: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	PHP3055L dds25 PHP3055
d 1047 transistor Abstract: BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf Text: II DtiE d N AMER P HILIPS/DISCRETE 86D 0 1952* D 7 • oom no s 3 3 49 BLY92A _ A_ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	PDF	bly92a OT-48/2. d 1047 transistor BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
8060 transistor Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24 Text: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —	OCR Scan	PDF	MPS-H24 470pF 8060 transistor NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
multi-emitter transistor Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134 Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ \| BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.	OCR Scan	PDF	711D82b BLX96 multi-emitter transistor SOT-48 BLX96 IEC134 BLX-96 IEC-134
AN90B21 Abstract: AN90B10 AN90B20 AN90B22 AN90B01S AN90B60 AN90B00 AN90B00S AN90B20S SO-16D Text: Panasonic Others AN90B00/AN90B00S Series Transistor Arrays AN90B00 Series • Overview T he transistor array, the AN9QB0Q and the AN90B00S series, includes the circuits with eight transistors connect ed in e m itte r-c o m m o n s ty le s e v e n tra n s is to rs in	OCR Scan	PDF	AN90B00/ AN90B00S AN90B00 18-DIL SO-16D) 18-pin AN90B21 AN90B10 AN90B20 AN90B22 AN90B01S AN90B60 AN90B20S SO-16D
ST102 Abstract: LS38 Y-H8 846 transistor Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402	OCR Scan	PDF	STQ402 ST102 MIL-S-19500 ST102 LS38 Y-H8 846 transistor
LS29 Abstract: TRANSISTOR mosfet Text: SILICON TRANSISTOR CORP Ô2S4G25 St.E D DGDG'ì'ìb Ô3 2 « S T C \ 'Z ° \ 'Z n SILICON TRANSISTOh CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 100 VOLTS 075 OHMS QUAD N CHANNEL POWER MOSFET	OCR Scan	PDF	2S4G25 STQ102 ST102 MIL-S-19500 LS29 TRANSISTOR mosfet
406j transistor Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846 Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and	OCR Scan	PDF	14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
Untitled Abstract: No abstract text available Text: S I LI CO N T R A N S I S T O R CORP fl2S4D22 OOOOfififi BBS « S T C SbE D SILICON TRANSISTOR CORPORATION I '3 ° M 2 > Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET	OCR Scan	PDF	fl2S4D22 SNF20404 ST102 MIL-S-19500
mosfet js8 Abstract: u488 Text: S I L I CO N T R A N S I S T O R CORP SbE ] • DDOOTflfl 7 bb M S T C 8254022 SILICON TRANSISTOR CORPORATION 'T ^ -2 7 Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.40 Ohms QUAD N CHANNEL POWER MOSFET	OCR Scan	PDF	STQ502 mosfet js8 u488

TRANSISTOR 1046 Search Results

TRANSISTOR 1046 Result Highlights (5)

TRANSISTOR 1046 Datasheets Context Search

Untitled

SILICON TRANSISTOR CORP

Silicon Transistor Corp

2sb504

SILICON TRANSISTOR CORP

SILICON TRANSISTOR CORP

SILICON TRANSISTOR CORP

Untitled

HF 331 transistor

k 246 transistor fet

dds25

d 1047 transistor

2N2222A 338

y51 h 120c

IC HXJ 2038

1N6227

8060 transistor

multi-emitter transistor

AN90B21

ST102

LS29

406j transistor

Untitled

mosfet js8