TRANSISTOR 1012 GE Search Results

Contextual Info: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 15A)

GT15J311

Contextual Info: GT15J311,GT15J311 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT15J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed : tf=0.30,«s (Max.) (l£ = 15A)

2-10R1C

Abstract: GT15J301 V200
Contextual Info: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation ^3.2 ± 0.2 2.7±Q 2 < v> cn CO O Enhancement-Mode High Speed

phototransistor ultraviolet

Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
Contextual Info: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to

transistor D361

Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
Contextual Info: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components

Contextual Info: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen

IGBT Power Module siemens ag

Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
Contextual Info: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522

HP optocoupler

Abstract: photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55
Contextual Info: ÉÉSSfflieÉ . . . % - • • - HEWLETT ■-■-ÿ-ii* , ; . " 1 • ' ÉPPLICATION NOTE 1023 PACKARD ■Iii|iinn»naii8— ■ ■ ig j; - ; This application note describes the im m unity of HewlettPackard optocouplers to the effects of high radiation

UTC1012

Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
Contextual Info: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

PMBTA55

Abstract: PMBTA06
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors PMBTA55; PMBTA56 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification, e.g.

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive

Contextual Info: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for

Q62702-P216

Abstract: SFH 229 GEO06653 Q62702-P215 sfh diode
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)

GEOY6653

Abstract: Q62702-P215 Q62702-P216
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)

GEX06260

Abstract: Q62702-P1671 Q62702-P930 SFH213FA 870nm
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA SFH 213 SFH 213 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 213 und bei 880 nm (SFH 213 FA)

GEXY6260

Abstract: Q62702-P1671 Q62702-P930
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA SFH 213 SFH 213 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 213 und bei 880 nm (SFH 213 FA)

SFH 340

Abstract: GEXY6630 Q62702-P1672 Q62702-P922
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA SFH 214 SFH 214 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 214 und bei 880 nm (SFH 214 FA)

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

acrian RF POWER TRANSISTOR

Abstract: JTDA50 JTDA50-2 Scans-00115670
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for

L7E transistor

Contextual Info: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA

214 opto

Abstract: GEX06630 Q62702-P1672 Q62702-P922
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA SFH 214 SFH 214 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 214 und bei 880 nm (SFH 214 FA)

diode sy 400

Abstract: sy 320 diode
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable

GEOY6653

Abstract: OHLY0598
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich