TRANSISTOR 1012 Search Results
TRANSISTOR 1012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
transistor 1012 F
Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
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O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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BLV11Contextual Info: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is |
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OT-123. BLV11 | |
transistor 1012
Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
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O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220 | |
diode sy 400
Abstract: sy 320 diode
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PHP10N40E T0220AB diode sy 400 sy 320 diode | |
bly87a
Abstract: transistor c 1974
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1002b BLY87A T-33-07 --j16 bly87a transistor c 1974 | |
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and |
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PHP10N4OE T0220AB | |
486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
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transistor TIP3055Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955. |
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TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055 | |
TLP421GB
Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
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TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603 TLP421GB 11-5B2 VDE0884 EN60065EN60950 | |
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 | |
TLP421
Abstract: TOSHIBA TUV 11-5B2 VDE0884 TLP421-2
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TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603hen TOSHIBA TUV 11-5B2 VDE0884 TLP421-2 | |
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PH3230Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK). |
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PH3230 M3D748 OT669 PH3230 | |
sot3
Abstract: marking 8A MUN5214T1
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MUN5211T1 70/SOT sot3 marking 8A MUN5214T1 | |
TLP721F
Abstract: 74285 e152349 TOSHIBA VDE E67349 TLP721
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TLP721F TLP721F TLP721. E67349 E152349 UL1577 EN60065When 74285 e152349 TOSHIBA VDE E67349 TLP721 | |
MA3006
Abstract: tlp731 E67349 TLP732 VDE0884
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TLP731 TLP732 TLP731, TLP732 UL1577, E67349 EN60065 MA3006 E67349 VDE0884 | |
PH3230
Abstract: SOT669-LFPAK sot669 package
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PH3230 M3D748 OT669 PH3230 SOT669-LFPAK sot669 package | |
E67349
Abstract: TLP733 TLP734 VDE0884
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TLP733 TLP734 TLP733, TLP734 UL1577, E67349 EN60065 E67349 VDE0884 | |
Contextual Info: TLP550 3aAÄAs IRED & PHOTO-IC TENTATIVE DEGITAL LOGIC ISOLATION. 8 7 6 c 3 4 LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. 1 2 TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor. |
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TLP550 TLP550 2500Vrms E67349 --10C | |
pspice
Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
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HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1 | |
INVERTOR APPLICATION NOTEContextual Info: GaAÔAs IRED & PHOTO-IC TLP550 DEGITAL LOGIC ISOLATION. LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor. TLP550 has no base connection, and is suitable |
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TLP550 TLP550 2500Vrms E67349 10C1E INVERTOR APPLICATION NOTE | |
Contextual Info: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor. |
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HCPL-2503 HCPL-4502 6N136 6N135 HCPL-4502/HGPL-2503 6N136/5 C1946 74bbflSl C2D00 DQ0b03fl |