TRANSISTOR 1002 Search Results

2N3904

Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
Contextual Info: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with

2n3904 transistor

Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
Contextual Info: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with

2n3906 equivalent transistor

Abstract: 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain
Contextual Info: 2N3906 TRANSISTOR PNP PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA „ EQUIVALENT CIRCUITS

2SC5169

Abstract: low noise transistor table
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and amplifier applications z As complementary type, the PNP transistor 2N3906 is

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

R T O BH TRANSISTOR

Abstract: 2SC5168 transistor CR NPN
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.

transistor 2n3904

Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and amplifier applications z As complementary type, the PNP transistor 2N3906 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is

Contextual Info: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with

transistor 1012 TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

2SA1036

Abstract: IMT17 IMT17-AG6-R IMT17L-AG6-R
Contextual Info: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES 4 *Two 2SA1036 chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = - 500mA 5 6 3 STRUCTURE 4 5 2 1

2n3904 transistor

Abstract: 2N3904, transistor 2n3904 MMBT3904 jiangsu 2n3904 TRANSISTOR npn transistor 2n3906 PNP switching transistor 2N3906 mhz 2n3906 npn 2n3904 TRANSISTOR PNP 2N3906
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

2SB1412

Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use