TRANSISTOR 1.2W Search Results

NTE106

Contextual Info: NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Contextual Info: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating

TS16949

Abstract: ZXTN5551Z ZXTP5401Z ZXTP5401ZTA marking p01 sot89 P01 SOT89
Contextual Info: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating

KSP44M

Contextual Info: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

ZXTN5551Z

Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Contextual Info: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating

KSP44M

Contextual Info: KSP44M KSP44M High Voltage Transistor • Collector-Emitter Voltage : BVCEO= 400V • Collector Dissipation : PC Max. =1.2W TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package

Ksp44 data

Abstract: transistor KSP44 data
Contextual Info: KSP44M/45M NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =1.2W TO -126 ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

2N2894

Abstract: 2N2894CSM 12w 98 transistor
Contextual Info: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.

12W SOT23

Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

12w 98 transistor

Contextual Info: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.

Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

ic 4081 datasheet

Abstract: IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 2N2894 4081 datasheet 4081 transistor coms 4081 ic and 4081 datasheet
Contextual Info: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N3250CSM

Contextual Info: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15

Contextual Info: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15

Contextual Info: 2N2484 SEME LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)

10KW

Abstract: 2N2484
Contextual Info: SEME 2N2484 LAB NPN SILICON AMPLIFIER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016)

12w 5d

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES

Contextual Info: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage

2N3963

Contextual Info: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage

2C746

Contextual Info: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

2C746

Contextual Info: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)