TRANSISTOR 0605 Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: International [iggRectifier P D - 9.781 A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: Y TED Hygienischer Druckschalter Eigenschaften „„ -1 … 0 bar bis 0 … 25 bar „„ Robustes Edelstahlgehäuse für raue Umgebungsbedingungen „„ Eigensichere Ausführung (LCIE 03 ATEX 6300 X) „„Zwei Ausgänge mit Schaltfunktion (PNP-Transistor oder galvanisch

0A4B

Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
Contextual Info: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of

IXBH12N300

Abstract: IXBT12N300
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

C-48U

Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

4X4 HEX KEY PAD

Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
Contextual Info: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of

army sc-c-179495

Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Contextual Info: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.

DD 127 D TRANSISTOR

Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

2N6796

Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

NE8563S

Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST

4x4 matrix keypad in pic with c code

Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
Contextual Info: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of

2N4405

Abstract: 3TF50 QPL-19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 February 2000. INCH-POUND MIL-PRF-19500/448B 3 February 1999 SUPERSEDING MIL-S-19500/448A USAF 29 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

LTC1642AIGN

Abstract: 01642a 1N4705 2N2222 FDS6630A LTC1642A LTC1642ACGN 13.85V OFFSET
Contextual Info: LTC1642A Hot Swap Controller U FEATURES DESCRIPTIO • The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an

K 2056 transistor

Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Contextual Info: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.

2SB1588

Contextual Info: i, L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1588 Silicon PNP Darlington Power Transistor ("^011)93 •VWH yr DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE

2N498

Abstract: 2N497 2N497S 2N498S 2N65 2N656S 2N657S transistor 2N656
Contextual Info: MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON* M F n r i i M - P n U F n ^ tV p 'eV VN4 97 , ' Y nV9~8 ,* 2N 6 56Y N 6577 ' ZN497S, 2N498S, 2N656S, 2N657S

Contextual Info: Provisional Data Sheet No. PD 9.809 International IG R Rectifier IRFI2 6 0 HEXFET TRANSISTOR N-CHANNEL Product Summary 200Volt, 0.060Q, HEXFET H E X F E T technology Is the key to International Rectifier’s advanced line of power M OSFET transis­ tors. The efficient geometry design achieves very

OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Contextual Info: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.

1SS SOT-23

Abstract: NDS0605 SFs SOT23
Contextual Info: April 1995 N D S0605 P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.

2N651A

Abstract: 2N650A WE VQE 23 F 175C 2N652A 2n85
Contextual Info: M IL -S -19300/175C 10 October 1958 SUPERSEDING M IL -S -19500/175B 2 July 1384 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, L O w -PO w EK TYPES 2N650A, 2N651A, AND 2N652A Thi» specification is m andatory fo r u se b y a ll D ep art­

2N1305

Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309
Contextual Info: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart­

Contextual Info: LTC1642A Hot Swap Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an