TRANSISTOR 033 Search Results

TRANSISTOR 033 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 033 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
BUK453-60A Abstract: BUK453-60B T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711065b BUK453-60A/B T0220AB BUK453-60A BUK453-60B	PDF
ZO 107 MA Abstract: 341S Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low	OCR Scan	2SC5009 2SC5009 ZO 107 MA 341S	PDF
Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the	Original	NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516	PDF
NEC JAPAN 237 521 02 Abstract: transistor zo 607 2SC5004 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the	Original	2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607	PDF
TRANSISTOR 2SC 2581 Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS	OCR Scan	2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733	PDF
transistor zo 607 Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582 Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the	Original	NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582	PDF
TRANSISTOR T 927 Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066 Contextual Info: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to	Original	Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066	PDF
NEC 1357 Abstract: LA 8873 TRANSISTOR C 4460 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the	OCR Scan	2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460	PDF
D 1437 transistor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the	OCR Scan	2SC5004 D 1437 transistor	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Objective specification 1998 Apr 14 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1046 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION	Original	M3D381 BLF1046 BLF1046 OT467A OT467A) SCA59 125108/00/01/pp8	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Objective specification 1998 Mar 23 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1047 PINNING - NO407 FEATURES • High power gain PIN DESCRIPTION	Original	M3D390 BLF1047 MBK765 BLF1047 NO407 NO407) SCA57 125108/00/01/pp8	PDF
AT42070 Abstract: transistor C200 AT-42070 S21E Contextual Info: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many	Original	AT-42070 AT-42070 AT42070 5989-2654EN AV02-1218EN transistor C200 S21E	PDF
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT4126PT SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 CONSTRUCTION * PNP Silicon Transistor	Original	CHT4126PT OT-23	PDF

CHT4126GP Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT4126GP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 CONSTRUCTION * PNP Silicon Transistor	Original	CHT4126GP OT-23 CHT4126GP	PDF
"MARKING CODE P5" Abstract: 03389 BFG425W Contextual Info: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES	Original	BFG425W SCA57 125104/00/04/pp12 "MARKING CODE P5" 03389 BFG425W	PDF
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 □02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	bb53T31 02tUb4 BLV95 OT-171) tbS3T31	PDF
str 5708 Abstract: BFG403W Contextual Info: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES	Original	BFG403W SCA57 125104/00/04/pp12 str 5708 BFG403W	PDF
"MARKING CODE P4" Abstract: BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668 Contextual Info: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES	Original	BFG410W SCA57 125104/00/04/pp12 "MARKING CODE P4" BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668	PDF
transistor marking t05 Abstract: T05 sot-23 transistor t05 h 033 cht05 Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT05PT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)	Original	CHT05PT OT-23 OT-23) 500mA) transistor marking t05 T05 sot-23 transistor t05 h 033 cht05	PDF
CHT05GP Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT05GP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)	Original	CHT05GP OT-23 OT-23) 500mA) CHT05GP	PDF
MAM100 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC04 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor	Original	M3D088 PDTA114ET PDTA114ET MAM100 SCA54 115104/1200/04/pp8 MAM100	PDF
PDTA114TS Abstract: PDTC114TS Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114TS PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor	Original	M3D186 PDTA114TS MAM352 SCA55 115104/1200/02/pp8 PDTA114TS PDTC114TS	PDF
BUV20 Contextual Info: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.	OCR Scan	BUV20/D BUV20 BUV20	PDF

TRANSISTOR 033 Search Results

TRANSISTOR 033 Result Highlights (5)

TRANSISTOR 033 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

BUK453-60A

ZO 107 MA

NEC JAPAN 237 521 02

TRANSISTOR 2SC 2581

transistor zo 607

TRANSISTOR T 927

NEC 1357

D 1437 transistor

AT42070

CHT4126GP

"MARKING CODE P5"

str 5708

"MARKING CODE P4"

transistor marking t05

CHT05GP

MAM100

PDTA114TS

BUV20