TRANSISTOR 0122 Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Transistor BFr 99

Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s

Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!

th 2267

Contextual Info: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

TS 11178

Contextual Info: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

q1221

Contextual Info: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package H

2sc5143 transistor horizontal toshiba

Abstract: transistor 0122
Contextual Info: 2SC5143 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 7<;r m a * HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm 15.5 + 0.5 HIGH SPEED SWITCHING APPLICATIONS • High Voltage : V ^ b o -1700V •

Contextual Info: SIEMENS BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

Contextual Info: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling

bfr193

Contextual Info: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F - 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Q62702-F1218 Pin Configuration

Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E

Contextual Info: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol

2SK681A

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: SIEMENS BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!