TRANSISTOR .280 4L STUD Search Results

TRANSISTOR .280 4L STUD Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR .280 4L STUD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UML25S Abstract: ASI10694 Text: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package	Original	UML25S UML25S ASI10694 ASI10694	PDF
MRF5176 Abstract: No abstract text available Text: MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD FEATURES: A 45° • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package	Original	MRF5176 MRF5176	PDF
UML25S Abstract: ASI10694 Text: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package	Original	UML25S UML25S ASI10694 ASI10694	PDF
ULBM5 Abstract: ASI10680 Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD	Original		PDF
CD6105 Abstract: No abstract text available Text: CD6105 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package	Original	CD6105 CD6105	PDF
CD6105A Abstract: No abstract text available Text: CD6105A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105A is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 7.8 dB Typical at 400 MHz • Economical .280” Stud Package	Original	CD6105A CD6105A	PDF
TVU0.5 Abstract: ASI10640 Text: TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5 is a gold metallized RF transistor designed for UFH linear applications for TV bands IV and V. It utilizes emitter ballasting for high linearity and ruggedness. PACKAGE STYLE .280 4L STUD A	Original		PDF
ULBM10 Abstract: ASI10682 TRANSISTOR TC 137 Text: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD	Original	ULBM10 ULBM10 ASI10682 TRANSISTOR TC 137	PDF
cd2810 Abstract: No abstract text available Text: CD2810 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2810 is a UHF Communication Power Transistor for band IV and V Class A Applications up to 800 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Common Emitter • Omnigold Metallization System MAXIMUM RATINGS	Original	CD2810 CD2810	PDF
TRW54601 Abstract: No abstract text available Text: TRW54601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter	Original	TRW54601 TRW54601	PDF
PT9702B Abstract: No abstract text available Text: PT9702B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9702B is a Common Emitter Device Designed for Class AB and C Amplifier Applications in the 220 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization	Original	PT9702B PT9702B	PDF
TPV394 Abstract: No abstract text available Text: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting	Original	TPV394 TPV394	PDF
TPV591 Abstract: No abstract text available Text: TPV591 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting	Original	TPV591 TPV591	PDF
TPV593 Abstract: chroma 175 ic chroma sound cob Text: TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting	Original	TPV593 TPV593 chroma 175 ic chroma sound cob	PDF

PT9701B Abstract: No abstract text available Text: PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization	Original	PT9701B PT9701B	PDF
Untitled Abstract: No abstract text available Text: TPV 394 NPN RF POWER TRANSISTOR DESCRIPTION: The TPV 394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting	Original		PDF
TPM401 Abstract: No abstract text available Text: TPM401 NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS	Original	TPM401 TPM401	PDF
pt9701 Abstract: 55AD Text: PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization	Original	PT9701 PT9701 55AD	PDF
7550A Abstract: CD3968 Text: CD3968 NPN RF POWER TRANSISTOR DESCRIPTION: The CD3968 is a Common Emitter Device Designed for Class C Amplifier Applications in the 960 MHz Mobile Radio Band. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting	Original	CD3968 CD3968 7550A	PDF
PT9704 Abstract: TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832 Text: PT9704 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9704 is Designed for wideband, large-signal amplifier Applications up to 500 MHz. PACKAGE STYLE .280" 4L STUD A 45° C FEATURES INCLUDE: E B • Gold Metalization • Diffused Ballast Resistors	Original	PT9704 PT9704 TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832	PDF
LT3014 Abstract: No abstract text available Text: LT3014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: PACKAGE STYLE .280 4L STUD • Gold Metalization • Emitter Ballasting	Original	LT3014 LT3014	PDF
MSC80806 Abstract: No abstract text available Text: MSC80806 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80806 is Designed for General Purpose Class A, Common Emitter Applications in the 500 MHz to 2.0 GHz Frequency Range. FEATURES INCLUDE: PACKAGE STYLE .280" 4L STUDLESS • Gold Metalization • Emitter Ballasting	Original	MSC80806 MSC80806	PDF
TPM401S Abstract: No abstract text available Text: TPM401S NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401S is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS	Original	TPM401S TPM401S	PDF
BLX94A Abstract: BLX94 Text: ASI BLX94A NPN RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLX94A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications from 50 to 500 MHz. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting	Original	BLX94A BLX94A BLX94	PDF

TRANSISTOR .280 4L STUD Search Results

TRANSISTOR .280 4L STUD Result Highlights (5)

TRANSISTOR .280 4L STUD Datasheets Context Search

UML25S

MRF5176

UML25S

ULBM5

CD6105

CD6105A

TVU0.5

ULBM10

cd2810

TRW54601

PT9702B

TPV394

TPV591

TPV593

PT9701B

Untitled

TPM401

pt9701

7550A

PT9704

LT3014

MSC80806

TPM401S

BLX94A