TRANSISTOR .280 4L STUD Search Results

UML25S

Abstract: ASI10694
Contextual Info: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package

MRF5176

Contextual Info: MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD FEATURES: A 45° • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package

UML25S

Abstract: ASI10694
Contextual Info: UML25S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML25S is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package

ULBM5

Abstract: ASI10680
Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD

CD6105

Contextual Info: CD6105 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 9.5 dB Typical at 400 MHz • Economical .280” Stud Package

CD6105A

Contextual Info: CD6105A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD6105A is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • PG = 7.8 dB Typical at 400 MHz • Economical .280” Stud Package

TVU0.5

Abstract: ASI10640
Contextual Info: TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5 is a gold metallized RF transistor designed for UFH linear applications for TV bands IV and V. It utilizes emitter ballasting for high linearity and ruggedness. PACKAGE STYLE .280 4L STUD A

ULBM10

Abstract: ASI10682 TRANSISTOR TC 137
Contextual Info: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD

cd2810

Contextual Info: CD2810 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2810 is a UHF Communication Power Transistor for band IV and V Class A Applications up to 800 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Common Emitter • Omnigold Metallization System MAXIMUM RATINGS

TRW54601

Contextual Info: TRW54601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter

PT9702B

Contextual Info: PT9702B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9702B is a Common Emitter Device Designed for Class AB and C Amplifier Applications in the 220 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

TPV394

Contextual Info: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting

TPV591

Contextual Info: TPV591 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

TPV593

Abstract: chroma 175 ic chroma sound cob
Contextual Info: TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

PT9701B

Contextual Info: PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

Contextual Info: TPV 394 NPN RF POWER TRANSISTOR DESCRIPTION: The TPV 394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting

TPM401

Contextual Info: TPM401 NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

pt9701

Abstract: 55AD
Contextual Info: PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

7550A

Abstract: CD3968
Contextual Info: CD3968 NPN RF POWER TRANSISTOR DESCRIPTION: The CD3968 is a Common Emitter Device Designed for Class C Amplifier Applications in the 960 MHz Mobile Radio Band. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting

PT9704

Abstract: TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832
Contextual Info: PT9704 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9704 is Designed for wideband, large-signal amplifier Applications up to 500 MHz. PACKAGE STYLE .280" 4L STUD A 45° C FEATURES INCLUDE: E B • Gold Metalization • Diffused Ballast Resistors

LT3014

Contextual Info: LT3014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: PACKAGE STYLE .280 4L STUD • Gold Metalization • Emitter Ballasting

MSC80806

Contextual Info: MSC80806 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80806 is Designed for General Purpose Class A, Common Emitter Applications in the 500 MHz to 2.0 GHz Frequency Range. FEATURES INCLUDE: PACKAGE STYLE .280" 4L STUDLESS • Gold Metalization • Emitter Ballasting

TPM401S

Contextual Info: TPM401S NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401S is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

BLX94A

Abstract: BLX94
Contextual Info: ASI BLX94A NPN RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLX94A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications from 50 to 500 MHz. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting