TRANSISTOR, IC 1A DATASHEET, NPN Search Results

TRANSISTOR, IC 1A DATASHEET, NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR, IC 1A DATASHEET, NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)	Original	2SA2094 2SC5866 SC-96) R1102A	PDF
Untitled Abstract: No abstract text available Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified	Original	2N3019HR 2N3019HR	PDF
complementary npn-pnp Abstract: SO-8 V 052 S01DTP06 STS01DTP06 STS01DTP06T4 STS01DTP so-8 marking STMicroelectronics npn-pnp dual Text: STS01DTP06 DUAL COMPLEMENTARY NPN-PNP BIPOLAR TRANSISTOR Preliminary Datasheet Figure 1: Package Table 1: General Features n n n n VCE sat hFE IC 0.35 V > 100 1A HIGH GAIN LOW VCE(sat) SIMPLIFIED CIRCUIT DESIGN REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM POLE CONFIGURATION	Original	STS01DTP06 STS01DTP06 complementary npn-pnp SO-8 V 052 S01DTP06 STS01DTP06T4 STS01DTP so-8 marking STMicroelectronics npn-pnp dual	PDF
Untitled Abstract: No abstract text available Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages	Original	2N3700HR 2N3700HR MILPRF19500) DocID15354	PDF
5201/002/05R Abstract: No abstract text available Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram	Original	2N3700HR 2N3700HR MILPRF19500) DocID15354 5201/002/05R	PDF
JANSR2N3700UB Abstract: ESCC Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram	Original	2N3700HR 2N3700HR MILPRF19500) DocID15354 JANSR2N3700UB ESCC	PDF
Untitled Abstract: No abstract text available Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages	Original	2N3700HR 2N3700HR MILPRF19500) DocID15354	PDF
Untitled Abstract: No abstract text available Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages	Original	2N3700HR 2N3700HR DocID15354	PDF
transistor crossreference Abstract: transistor cross reference TIP47TU TIP50TU crossreference transistor TIP50 application notes transistor 2203 transistor Ic 1A NPN NPN Transistor TO220 vcc 150V Text: TIP47/48/49/50 TIP47/48/49/50 High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current NPN Silicon Transistor TO-220 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter	Original	TIP47/48/49/50 TIP47 TIP48 TIP49 TIP50 TIP50 transistor crossreference transistor cross reference TIP47TU TIP50TU crossreference transistor TIP50 application notes transistor 2203 transistor Ic 1A NPN NPN Transistor TO220 vcc 150V	PDF
J13007-2 Abstract: J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted	Original	FJP13007 FJP13007 O-220 FJP13007H1TU FJP13007H2TU FJP13007TU J13007-2 J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 F J13007-2	PDF
J13007-2 Abstract: j13007 J-13007-2 transistor j13007 FJPF13007 F J13007-2 transistor J13007-1 Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted	Original	FJPF13007 FJPF13007 O-220F FJPF13007H2TTU FJPF13007TU J13007-2 j13007 J-13007-2 transistor j13007 F J13007-2 transistor J13007-1	PDF
t6790 Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726 Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50	Original	ZDT6790 OT223) T6790 500mA, FZT690 -10mA, -500mA, -50mA, 50MHz t6790 ZDT6790 zetex t6790 100MA 45 V NPN ic1a DSA003726	PDF
t6753 Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725 Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725	PDF
FJPF13007 Abstract: electronic ballast with npn transistor Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted	Original	O-220F FJPF13007 electronic ballast with npn transistor	PDF

NPN Transistor 1.5A 300V Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V Text: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5402D/KSC5402DT O-220 NPN Transistor 1.5A 300V QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V	PDF
1A 300V TRANSISTOR Abstract: No abstract text available Text: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5402D/KSC5402DT O-220 1A 300V TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted	Original	O-220F FJPF13007	PDF
FJP13007 Abstract: electronic ballast with npn transistor Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted	Original	O-220 FJP13007 electronic ballast with npn transistor	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 KSC5338D/KSC5338DW	PDF
KST3904MTF Abstract: No abstract text available Text: KST3904 KST3904 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage	Original	KST3904 OT-23 KST3904 KST3904LGEMTF KST3904MTF	PDF
trace code TO-220 Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram	Original	FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 O-220	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 O-220	PDF
marking code transistor list Abstract: FJC690 FJC790 Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings	Original	FJC690 FJC790 OT-89 FJC690 marking code transistor list FJC790	PDF

TRANSISTOR, IC 1A DATASHEET, NPN Search Results

TRANSISTOR, IC 1A DATASHEET, NPN Result Highlights (5)

TRANSISTOR, IC 1A DATASHEET, NPN Datasheets Context Search

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complementary npn-pnp

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5201/002/05R

JANSR2N3700UB

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transistor crossreference

J13007-2

J13007-2

t6790

t6753

FJPF13007

NPN Transistor 1.5A 300V

1A 300V TRANSISTOR

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FJP13007

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KST3904MTF

trace code TO-220

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marking code transistor list