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    TRANS-TECH DESIGN GUIDE Search Results

    TRANS-TECH DESIGN GUIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANS-TECH DESIGN GUIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    POWERPAK SO8

    Abstract: Res 2512 3a step down dc to dc regulator so8 DPAK-TO252AA SUD50N03-07 c13 sot23-5 shunt R010 TLC555CD 06035A470KAT1A CR16-1332FM
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 438 TRIPLE PHASE, SINGLE OUTPUT STEP-DOWN CONVERTER LTC3731CG DESCRIPTION Demonstration circuit 438 is a triple phase single output synchronous buck converter featuring the LTC 3731CG. This circuit can be used for desktop


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    PDF LTC3731CG 3731CG. DC438 LTC3731CG LT1761 us25-0R8NC-U CMD4D08-100 CLS62-100 6328-TO64) POWERPAK SO8 Res 2512 3a step down dc to dc regulator so8 DPAK-TO252AA SUD50N03-07 c13 sot23-5 shunt R010 TLC555CD 06035A470KAT1A CR16-1332FM

    nielinger

    Abstract: Fleischmann chebyshev mtt siemens heft MAR 735 mosfet pp Siemens MTT philips 1968 MOSFET dynamic
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 6 6.1 References 4. Hilberg, W., ‘Einige grundsätzliche Betrachtungen zu Breitband-Übertragern’, NTZ, 1966, Heft 9, pp. 527-538. REFERENCES References in the main text


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    74LVC05

    Abstract: 7400 datasheet 2-input nand gate 74LVC05A LVC1G04 transistor x1 pv 25 inverter board design pv 74ALVC1G04 74ALVCH244 7400 nand gate series 74ALVC1G14
    Text: Selector Guide for ALVC/LVC Products the leading provider of high-performance logic. From single-gate to 32-bit, IDT is your source for ALVC/LVC logic. Today’s designers are developing the most challenging telecommunications, networking and PC products ever designed


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    PDF 32-bit, compatibilit-7850 74LVC05 7400 datasheet 2-input nand gate 74LVC05A LVC1G04 transistor x1 pv 25 inverter board design pv 74ALVC1G04 74ALVCH244 7400 nand gate series 74ALVC1G14

    wurth 749022017

    Abstract: 749022016 DC1567 DC1814A-B CRCW0402100KJNEA 13W SOT23 CRCW0603100KJNEA fdn8601 schematic diagram 48V power supply Poe POWER33
    Text: DEMO MANUAL DC1788A LT4275 LTPoE+, IEEE 802.3at/ IEEE 802.3af Compliant PD Controller DESCRIPTION Demonstration circuit 1788A features the LT 4275, a fourth generation powered device PD controller for Power over Ethernet (PoE) applications. The DC1788A is available in DC1788A-A, DC1788A-B, and


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    PDF DC1788A LT4275 dc1788af wurth 749022017 749022016 DC1567 DC1814A-B CRCW0402100KJNEA 13W SOT23 CRCW0603100KJNEA fdn8601 schematic diagram 48V power supply Poe POWER33

    470uF 25V TANT

    Abstract: 352068-1 Compact PCI 352068-1 CompactPCI 352068-1 erjm1wsf7m0u SMAJ12CA Diode SMAJ12CA AMP 352068 data sheet header,2x7pin,0.079cc CR16-201JM
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 458 I2C COMPACT PCI HOT SWAP CONTROLLER LTC4240 QUICKEVAL PROCEDURE Demonstration circuit 458 is configured to be a part of the LTC QuickEval system for quick and easy I²C™ control. The QuickEval software is downloaded


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    PDF LTC4240 DC590A, 14-pin DC458 1/16W LTC4240CGN28 SSOP28GN 470uF 25V TANT 352068-1 Compact PCI 352068-1 CompactPCI 352068-1 erjm1wsf7m0u SMAJ12CA Diode SMAJ12CA AMP 352068 data sheet header,2x7pin,0.079cc CR16-201JM

    IC 7106

    Abstract: tms 1601 UM1233 siemens dimmer solar photodiodes ZN414 40pd NCR5380-40 ic 6402 um12
    Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.


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    tms 1601

    Abstract: mte maxim um1233 Omron Cross Reference HONEYWELL MODULATOR MOTOR Allen Bradley SLC500 PLC siemens s5 100u plc manual FR-U1205 scr regulator emergency light RS7660
    Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.


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    hot electron devices

    Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li


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    um1233

    Abstract: HONEYWELL MODULATOR MOTOR RS7660 siemens servo motor connector tms 1601 Burr Brown PWR 74 ORP 12 SIMATIC S5-100u programming cable 014374 SN 576B
    Text: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.


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    Modified Coffin-Manson Equation Calculations

    Abstract: TN-00-18 TN0018 micron memory model for ddr3 TN-00-08 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994
    Text: TN-00-18: Temperature Uprating on Semiconductors Introduction Technical Note Uprating Semiconductors for High-Temperature Applications Introduction Uprating is used to evaluate a part’s ability to function and perform when it is used outside of the manufacturer’s specified temperature range.21 For example, the


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    PDF TN-00-18: TN-00-08 09005aef81694133/Source: 09005aef8169415f TN0018 Modified Coffin-Manson Equation Calculations TN-00-18 micron memory model for ddr3 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994

    Untitled

    Abstract: No abstract text available
    Text: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].


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    PDF AN-60-040) 10log AN-60-040 M150261 AN60040

    CGH40045

    Abstract: Mobile WiMAX abstract IC 502 POSTEC cree gan
    Text: A Highly Efficient Doherty Power Amplifier Employing Optimized Carrier Cell Junghwan Moon #1 , Young Yun Woo ∗ , and Bumman Kim #2 # Department of Electrical Engineering, Pohang University of Science and Technology POSTECH , Gyeongbuk, Republic of Korea


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    Str 5754

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1590B LTC3880: Dual Output Step-Down DC/DC Controller with Digital Power Management DESCRIPTION Demonstration circuit 1590B is a dual output synchronous buck converter featuring the LTC 3880EUJ, a dual output peak current mode controller with digital power system


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    PDF DC1590B LTC3880: 1590B 3880EUJ, DC1590B-A: 350kHz. DC1590B-B: 425kHz. LTC3880EUJ-1, LTC3880EUJ, Str 5754

    SMT DIODE SOD123

    Abstract: THCS50E2A225ZT 5v 1a ZENER DIODE 60v to 12v converter IC LT1956 12V to 5V buck boost converter C-THCR50 MMBT2222A SOT23 10MQ060N LCDRH6D
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 423 1A, 500KHZ HIGH VOLTAGE BUCK CONVERTER LT1956 DESCRIPTION Demonstration circuit 423 is a 60V, 500kHz, 1A load current, monolithic step-down DC/DC switching converter using the LT1956. With its wide input voltage range,


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    PDF 500KHZ LT1956 500kHz, LT1956. LT1956 L-CDRH6D28 MMBT2222A, LT1956EFE, TSSOPFE16 SMT DIODE SOD123 THCS50E2A225ZT 5v 1a ZENER DIODE 60v to 12v converter IC 12V to 5V buck boost converter C-THCR50 MMBT2222A SOT23 10MQ060N LCDRH6D

    r2s3

    Abstract: LTC4259A C54-C57 INDUCTOR DE 100UH SMD PACKAGE R2N1 power line communication design 4751F "power sourcing equipment" zener 150v 1w LT1498
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 609B IEEE802.3AF POWER-OVER-ETHERNET POWER SOURCING EQUIPMENT CONTROLLER LTC4259A DESCRIPTION Demonstration Circuit 609B features the LTC4259A, a quad –48V network power controller designed for use in IEEE802.3af compliant systems. Integrated in a 36-pin


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    PDF IEEE802 LTC4259A LTC4259A, 36-pin DC609B EVQPJS05K LTC4259ACGW LT1761ES5-3 24LC025 r2s3 LTC4259A C54-C57 INDUCTOR DE 100UH SMD PACKAGE R2N1 power line communication design 4751F "power sourcing equipment" zener 150v 1w LT1498

    Revalpha

    Abstract: Nitto* revalpha Nitto Denko Revalpha Revalpha NO.3195H etch uv tape and furukawa magnetron X-band microwave oven magnetron Mitsui chemicals X-band antenna
    Text: Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, and Bharat Patel M/A-COM : Tyco Electronics, 100 Chelmsford Street, Lowell, MA 01851 USA Phone: 978 656-2562, Fax: (978) 656-2900, Email: hhendriks@tycoelectronics.com


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    ML-1 94V-0

    Abstract: E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference
    Text: Why MG Chemicals? At MG Chemicals, we realize that our number one asset is you, our customer. ISO Quality Standards. Since 1955, M.G. Chemicals has provided the North American electronics industry with a full line of high performance chemicals and accessories. The M.G. Chemicals manufacturing facility operates


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    PDF 835-P-20 8420-P 8701-10ML, 8702-10ML, 8703-10ML, 8704-10ML) 416-E 416-ES 416-K 416-RP ML-1 94V-0 E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference

    FEBFSL126MR_H432V1

    Abstract: sck053 ceramic buss SR-5 UU9.8 ferrite core E157822 468-2FC sck-053 E85640 Nitto 31ct KUHS-225
    Text: User Guide for FEBFSL126MR_H432v1 Evaluation Board 5V, 12V Green-Mode Fairchild Power Switch FPS Featured Fairchild Product: FSL126MR Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com


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    PDF FEBFSL126MR H432v1 FSL126MR H432v1 FEBFSL126MR_H432V1 sck053 ceramic buss SR-5 UU9.8 ferrite core E157822 468-2FC sck-053 E85640 Nitto 31ct KUHS-225

    JESD-26

    Abstract: RAI-5-039 mineral spirits bulk modulus Silicone mold release agent JESD-22 KITAGAWA MINERAL SPIRITS
    Text: Package Reliability All products and packages offered by National Semiconductor Corporation meet the minimum reliability qualification requirements outlined in Table 1 and Table 2 for hermetic and plastic packages, respectively. These minimum requirements are applied to new packages as well as to existing


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    4G base station power amplifier

    Abstract: ulm 2003 Amplifier Research rf power amplifier schematic Conference Paper Reprint watkins-johnson am plifier CF24 GaN Bias 25 watt nokia rf power amplifier transistor research paper for differentiation broad-band Microwave Class-C Transistor Amplifiers
    Text: 3196 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 12, DECEMBER 2009 A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, Senior Member, IEEE, and Steve C. Cripps


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    GaN amplifier

    Abstract: GaN Bias 25 watt Gan on silicon transistor rf microwave amplifier with S Parameters rf power amplifier transistor with s-parameters rf power amplifier with s parameters S-10 S-14 high power fet amplifier schematic power amplifier mmic design high efficiency
    Text: 11/02/01 LB Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier Inder J. Bahl Abstract This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over


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    MMSD914LT1

    Abstract: 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 471 2A, 200KHZ HIGH VOLTAGE BUCK CONVERTER LT3430 DESCRIPTION Demonstration circuit 471 is a 60V, 200kHz, 2A load current, monolithic step-down DC/DC switching converter using the LT3430. With its wide input voltage range, 3A internal power


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    PDF 200KHZ LT3430 200kHz, LT3430. LT3430 TSSOPFE16 06033A221KAT1A 0603YC223KAT1A THCR60E2A475ZT MMSD914LT1 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG

    TRANSISTOR SUBSTITUTION 1993

    Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
    Text: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E


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    Untitled

    Abstract: No abstract text available
    Text: BIBLIOGRAPHY OF PTI PUBLICATIONS ON FREQUENCY CONTROL 1. Horton, W.H. and R.C. Smythe, "The Hybrid-Coil Bridge Method of Measuring Unwanted Modes of Vibration in Quartz Crystals," Proc. 17th Annual Symposium on Frequency Control pp. 316-324; 1963. 2. Smythe, R.C., "On the Realization of Crystal-Capacitor Tandem Lattice Bandpass Filters," Trans. IEEE, v. CT-11, no. 1, p. 170;


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    PDF CT-11, SLCET-TR-91-3