MC10107
Abstract: MC10107FN MC10107L MC10107P ANSI
Text: MC10107 Triple 2-Input Exclusive OR/ Exclusive NOR Gate • • • The MC10107 is a triple–2 input exclusive OR/NOR gate. PD = 40 mW typ/gate No Load tpd = 2.8 ns typ tr, tf = 2.5 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM 4 2
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MC10107
MC10107
MC10107L
MC10107P
r14525
MC10107/D
MC10107FN
MC10107L
MC10107P
ANSI
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MC10197
Abstract: MC10197FN MC10197L MC10197P
Text: MC10197 Hex AND Gate The MC10197 provides a high speed hex AND function with strobe capability. • PD = 200 mW typ/pkg No Load • tpd = 2.8 ns typ (B–Q) • tpd = 3.8 ns typ (A–Q) • tr, tf = 2.5 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS
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MC10197
MC10197
MC10197L
MC10197P
r14525
MC10197/D
MC10197FN
MC10197L
MC10197P
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MC10103L
Abstract: MC10103 MC10103FN MC10103P
Text: MC10103 Quad 2-Input OR Gate The MC10103 is a quad 2–input OR gate. The MC10103 provides one gate with OR/NOR outputs. • PD = 25 mW typ/gate No Load • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com LOGIC DIAGRAM MARKING DIAGRAMS
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MC10103
MC10103
MC10103L
MC10103P
r14525
MC10103/D
MC10103L
MC10103FN
MC10103P
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MC10102
Abstract: MC10102P MC10102-D equivalent MC10102FN MC10102L mc10102l for application S/BIP/SCB345100/B/1587/MC10102L
Text: MC10102 Quad 2-Input NOR Gate The MC10102 is a quad 2–input NOR gate. The MC10102 provides one gate with OR/NOR outputs. • PD = 25 mW typ/gate No Load • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com LOGIC DIAGRAM MARKING DIAGRAMS
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MC10102
MC10102
MC10102L
MC10102P
r14525
MC10102/D
MC10102P
MC10102-D equivalent
MC10102FN
MC10102L
mc10102l for application
S/BIP/SCB345100/B/1587/MC10102L
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triac ST T4 1060
Abstract: ST T4 1060 ST T4 0560 T4 3570 T4 0560 triac T4 0560 ST T4 0570 ST T4 3570 ST T4 3560 T4 3560 B
Text: T4 series 4 A Triacs Datasheet − production data . A2 G A1 TO-220AB T4-T Table 1. Main characteristics Symbol Value Unit IT(rms) 4 A VDRM, VRRM 600 to 800 V IGT 5 to 35 mA ISOWATT220AB (T4-W) Table 2. Device summary Symbol Marking T405-xxxB T405-xxxB-TR
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O-220AB
ISOWATT220AB
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T405-xxxW
T410-xxxB
T410-xxxB-TR
T410-xxxH
triac ST T4 1060
ST T4 1060
ST T4 0560
T4 3570
T4 0560 triac
T4 0560
ST T4 0570
ST T4 3570
ST T4 3560
T4 3560 B
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MC10104FN
Abstract: MC10104P MC10104 MC10104L
Text: MC10104 Quad 2-Input AND Gate The MC10104 is a quad 2–input AND gate. One of the gates has both AND/NAND outputs available. • PD = 35 mW typ/gate No Load • tpd = 2.7 ns typ • tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com LOGIC DIAGRAM 4 MARKING
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MC10104
MC10104
MC10104L
MC10104P
r14525
MC10104/D
MC10104FN
MC10104P
MC10104L
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T4 1060
Abstract: MC10101P T45 marking MC10101L mc10101 MC10101FN
Text: MC10101 Quad OR/NOR Gate The MC10101 is a quad 2–input OR/NOR gate with one input from each gate common to pin 12. • PD = 25 mW typ/gate No Load • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com LOGIC DIAGRAM 4 MARKING DIAGRAMS
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MC10101
MC10101
MC10101L
MC10101P
r14525
MC10101/D
T4 1060
MC10101P
T45 marking
MC10101L
MC10101FN
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MC10106
Abstract: MC10106FN MC10106L MC10106P
Text: MC10106 Triple 4-3-3-Input NOR Gate • • • The MC10106 is a triple 4–3–3 input NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM 4 5 16 CDIP–16 L SUFFIX CASE 620
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MC10106
MC10106
MC10106L
MC10106P
r14525
MC10106/D
MC10106FN
MC10106L
MC10106P
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MC10105
Abstract: MC10105L MC10105P MC10105FN t4 1080
Text: MC10105 Triple 2-3-2-Input OR/NOR Gate • • • The MC10105 is a triple 2–3–2 input OR/NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM 4 3 5 2 9 10 11 16 CDIP–16
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MC10105
MC10105
MC10105L
MC10105P
r14525
MC10105/D
MC10105L
MC10105P
MC10105FN
t4 1080
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mc10109
Abstract: MC10109FN MC10109L MC10109P
Text: MC10109 Dual 4-5-Input OR/NOR Gate • • • The MC10109 is a dual 4–5 input OR/NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM ă4 ă5 16 3 ă6 ă7 ă9 10 11 12
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MC10109
MC10109
MC10109L
MC10109P
r14525
MC10109/D
MC10109FN
MC10109L
MC10109P
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Untitled
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a
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TDM4953
TDM4953
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8205 A mosfet
Abstract: 8205 mosfet
Text: Datasheet N-Channel Enhancement Mode Power MOSFET TDM8205 Description D1 D2 The TDM8205 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 2.5V. This device is suitable for use as a
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TDM8205
TDM8205
OT23-6L
8205 A mosfet
8205 mosfet
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FES2J
Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Text: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG
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-65oC
150oC
FES2J
FES1J
w5 marking
MARKING w5
J4 marking code
EA marking code
MARKING U1
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SOT23-6
Abstract: SSF2485 SOT23-6 MARKING g2 Marking D2 SOT23-6 SOT23-6 g2 D1 Marking SOT23-6 TOP marking sot23-6
Text: SSF2485 D1 DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. D2 G1 G2 S1 S2 Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 150mΩ @ VGS=-2.5V
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SSF2485
SSF2485
OT23-6
180mm
SOT23-6
SOT23-6 MARKING g2
Marking D2 SOT23-6
SOT23-6 g2
D1 Marking SOT23-6
TOP marking sot23-6
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smd diode code mj
Abstract: smd diode code SL
Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055P3
smd diode code mj
smd diode code SL
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions
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GMM3x60-015X2
ID110
IF110
20120618a
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smd diode code SL
Abstract: Diode smd s6 46 160-0055X1 SMD MARKING g4
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20110307i
smd diode code SL
Diode smd s6 46
160-0055X1
SMD MARKING g4
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Untitled
Abstract: No abstract text available
Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS
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120-0075P3
20080527e
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SMD DIODE DEVICE sl
Abstract: No abstract text available
Text: GWM 120-0075X1 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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120-0075X1
20110407d
SMD DIODE DEVICE sl
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s4 35 diode marking code
Abstract: No abstract text available
Text: GWM 120-0075X1 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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120-0075X1
20110407d
s4 35 diode marking code
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smd diode code SL
Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20070809c
smd diode code SL
smd diode code g3
smd diode .S6 22
smd diode S2
Marking Code KEY
smd diode g5
SMD mosfet MARKING code TJ
smd code marking SL
S6 39 diode
DIODE S4 39
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20110307i
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smd diode code SL
Abstract: SMD mosfet MARKING code TJ SMD MARKING QG 6 PIN DIODE marking S4 06 200909 smd diode code g3 smd diode g6 160-0055X1 SMD MARKING g5 SMD mosfet MARKING code TC
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20090930h
smd diode code SL
SMD mosfet MARKING code TJ
SMD MARKING QG 6 PIN
DIODE marking S4 06
200909
smd diode code g3
smd diode g6
160-0055X1
SMD MARKING g5
SMD mosfet MARKING code TC
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marking k4
Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A
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OCR Scan
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
marking k4
100az
FMMT2222A
BCW33
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