Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: Series A2000, LP2000 & CB2000 Single Row Terminal Blocks A20510807WR SPECIFICATIONS Rating: A2: 30A, 300V* LP2: 30A, 150V* CB2: 30A, 300V* Center Spacing: 0.375” or 3/8” 9.52mm Wire Range: #12-22 AWG CU Screw Size: #6-32 zinc-plated philslot LP202110
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A2000,
LP2000
CB2000
A20510807WR
LP202110
E62622,
A38/B38/F38
A38/B38
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SOT143 Marking l51
Abstract: code l51 L51 transistor marking sot-143 BAS56
Text: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an
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BAS56
OT-143
35unless
200mA
500mA
400mA,
SOT143 Marking l51
code l51
L51 transistor
marking sot-143
BAS56
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code l51
Abstract: L51 MARKING BAS56
Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with
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BAS56
OT-143
200mA
500mA
400mA,
100ns
13-November
code l51
L51 MARKING
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SOT143 DUAL DIODE
Abstract: BAS56
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar
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BAS56
BAS56
OT-143
200mA
500mA
400mA,
100ns
SOT143 DUAL DIODE
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code l51
Abstract: MARKING CODE R7 DIODE "wl5" WL5 SOT-143 BAS56 L51 MARKING
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar
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BAS56
BAS56
OT-143
200mA
500mA
400mA,
100ns
code l51
MARKING CODE R7 DIODE
"wl5"
WL5 SOT-143
L51 MARKING
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M/MARKING CODE R7 DIODE
Abstract: BAS56
Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar
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BAS56
BAS56
OT-143
200mA
500mA
400mA,
100ns
M/MARKING CODE R7 DIODE
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marking code v6 SOT23
Abstract: ANALOG DEVICES MARKING DATE CODE marking L5 sot363 marking code v6 29 DIODE SOT-363 marking h2 H2 sc-88a ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information
Text: MC74VHC1G66 Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog
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MC74VHC1G66
MC74VHC4066.
marking code v6 SOT23
ANALOG DEVICES MARKING DATE CODE
marking L5 sot363
marking code v6 29 DIODE
SOT-363 marking h2
H2 sc-88a
ANALOG DEVICES ASSEMBLY DATE CODE
Analog devices assembly code marking Information
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Untitled
Abstract: No abstract text available
Text: INDEX All Series Marking Options Single Row Terminal Blocks Marking Options & Accessories Standard Marking Blocks to be marked on both sides require a different code for each side. Example: “L1” on one side of the block requires “L2” on the other side to ensure common terminal marking. Specify by
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DLD601/D
Mar-2001
r14525
DLD601
ON Semiconductor marking
fairchild marking codes sot-23
W2D SOT23
diode w2d
SOT-353 MARKING L5
marking code vk, sot-363
va sot-353
1C SOT353
MC74VHC1G135
vsop8 package outline
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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MC74HC1G14
MC74HC
353/SC
diode Marking code v3
sot 23-5 marking code H5
V = Device Code
marking H5 sot 23-5
Wafer Fab Plant Codes ST
fairchild mos
xaa64
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G00
MC74HC
353/SC
AND8004/D
V = Device Code
date code marking toshiba Nand
PIN DIODE MARKING CODE wk
marking sbn
h1d marking
AND8004
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MC74HC
Abstract: marking t132 marking code V6 diode V = Device Code
Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G04
MC74HC
353/SC
marking t132
marking code V6 diode
V = Device Code
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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LD33 VOLTAGE REGULATOR
Abstract: LD33 regulator LD33 VOLTAGE REGULATOR 3.3v LD33 SOT 223 LD33 LD33 SOT223 Analog Marking Information LD50 VOLTAGE REGULATOR LD33 marking SOT223 marking ld33
Text: Packaging for Automatic Handling — Tape & Reel General Description Tape & Reel Surface mount and TO-92 devices are available in tape and reel packaging. Surface mount components are retained in an embossed carrier tape by a cover tape. TO‑92 device leads are secured
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ANSI/EIA-481-C-2003
OT-23,
SC-70,
OT-143
OT-223.
LD33 VOLTAGE REGULATOR
LD33 regulator
LD33 VOLTAGE REGULATOR 3.3v
LD33 SOT 223
LD33
LD33 SOT223
Analog Marking Information
LD50 VOLTAGE REGULATOR
LD33 marking SOT223
marking ld33
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CTS 750 series
Abstract: 3570 1301 051 94v0 1052 schematic amplify CV 203 TMC 3162 3570 1301 PSA 88C Delco Electronics 3570 1301 151 Delco Electronics 185
Text: R E S I S T O R P R O D U C T S The CTS Resistor Products Catalog is also on the World Wide Web at www.ctscorp.com. The Web Catalog is updated regularly to provide all customers with the latest information on new products and improvements. You can also contact us at
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BAS56
Abstract: No abstract text available
Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed
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BAS56
OT-143
150oC
200mA
500mA
400mA,
100ns
BAS56
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r778
Abstract: STANAG 3838
Text: * * *New Product Release * * * M il-Std-l553/1760/MacAir Products NHI-15182EMT +5V Dual Redundant Extended Memory Enhanced Terminal Bus Controller, Remote Terminal, Bus Monitor, Concurrent RT/Monitor, 64K Words Internal RAM November 1, 1996 The NHI-15182EMT is a low cost complete interface between a dual redundant MIL-Std-1553 bus
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NHI-15182EMT
il-Std-l553/1760/MacAir
NHI-15182EMT
MIL-Std-1553
NHI-1582ET
NHI-15182EMTGW/
Mil-Std-883,
182EMT
Mil-Std-1553,
183EMT
r778
STANAG 3838
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Untitled
Abstract: No abstract text available
Text: Central BAS56 Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 con sists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an
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BAS56
OT-143
CPD41
OT-143
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Untitled
Abstract: No abstract text available
Text: TAAA12J3A REV. S ta tu s LOW PROFILE, THREE FLANGE 12VA POWER TRANSFORMER APPROVED TO U L506 AND CSA 0 2 2 .2 NO. 6 6 - 1 9 8 8 AND USES A UL CLASS B 13CTC APPROVED INSULATION SYSTEM v A. REVISION 0 5 / 0 1 / 0 7 YS / ' \ '_ Electrical S p ecifications (@25°C)
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TAAA12J3A
13CTC)
100MQ
500VDC,
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marking code tr4
Abstract: NK4 RESISTOR melf blue tr505 tr4 vishay n 332 ab C40101-019
Text: A COMPANY OF VISHAY Standard C O M P O N E N T S U.K. METAL FILM NK./TR./FP. Features • low noise • exceptional high frequency characteristics • approved to BS CECC/BT/M O D • proven high reliability • Qualified to CEC C40101-019 Style Style
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C40101-019
marking code tr4
NK4 RESISTOR
melf blue
tr505
tr4 vishay
n 332 ab
C40101-019
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M39015
Abstract: JM39015 ATR panel pin RT12C2Y101 RT24C2W501 MARKING CODE T5E RT12C2 marking code TS RT22C2P103 RTR24DW202
Text: f i - x f-G ? 1/2” SQUARE / MULTITURN / WIREWOUND SEALED • Listed on the QPL for style RT22 per MIL-R-27208 and RTR22 per High-Rel MIL-R-39015 POURNS Model 3250/RT22/RTR22 Bourns Trimming Potentiometer Electrical C haracteristics Standard Resistance Range
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MIL-R-27208
RTR22
MIL-R-39015
3250/RT22/RTR22
RTR24DW
RTR24DW103*
RTR24DX501
RTR24DX202*
RTR24DX502*
M39015
JM39015
ATR panel pin
RT12C2Y101
RT24C2W501
MARKING CODE T5E
RT12C2
marking code TS
RT22C2P103
RTR24DW202
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