TPV3 Search Results

TPV394

Contextual Info: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting

TPV-3100

Abstract: TPV3100 transistor tpv3100
Contextual Info: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting Internal Matching • PACKAGE STYLE .450 BAL FLG. A

TPV375

Abstract: R3665
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TPV375 The RF Line V H F Linear P o w e r T ra n sisto r T h e TPV 37 5 is a NPN gold m etallized tran sisto r usin g d iffused b allast re sisto rs for su p e r lin e arity. Th e T P V 37 5 is sp e c ific a lly d esig ned fo r high p o w er band III. T V tra n sp o s­

transistor rf vhf

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TPV394A VHF Linear Power Transistor , . . d esig ned s p e c ific a lly for band III T V tra n sp o se rs and tran sm itte r am p lifie rs. The T P V 39 4 A is in tern ally m atched and u se s gold m etallized d ie w ith d iffused em itter b allast

TPV3100

Abstract: TPV-3100 transistor tpv3100 "Power TRANSISTOR"
Contextual Info: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. C D F U LL R G O F E FEATURES INCLUDE: .1925 • Gold Metalization • Emitter Ballasting

tpv394a

Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
Contextual Info: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The

Contextual Info: TPV385 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

TPV3100

Abstract: TPV-3100 transistor tpv3100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T P V 31 00 The RF Line VHF Linear Power Transistor . . . designed fo r linear, p ush -p u ll a m p lifie rs in VHF Band III. The TPV3100 u tilizes gold m e ta llizatio n , d iffu se d e m itte r ballast resistors and a lo w th e rm a l resistance header to

TPV385

Abstract: transposers
Contextual Info: TPV385 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV385 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. PACKAGE STYLE 500 6L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballast Resistors

TPV-376

Abstract: TPV376
Contextual Info: TPV376 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV376 is a Common Emitter Device Designed for High Linearity Class A Television Band III 170-230 MHz Applications. PACKAGE STYLE .550 4L STUD(1/4) FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

TPV364

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers

arco 404

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line VHF Linear P o w er T ransistor . . . desig n ed sp e cifica lly fo r band III TV tra n sp ose rs and tra n s m itte r a m p lifie rs . The TPV385 is in te rn a lly m atched and uses g o ld m e tallized die w ith d iffu se d e m itte r ballast

TPV387

Abstract: imd1
Contextual Info: TPV387 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV387 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. PACKAGE STYLE 500 6L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballast Resistors

Contextual Info: TPV387 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)16 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Si24xx2G-DC

Abstract: DO214AA-NP cmc tp16 SOT23-BEC
Contextual Info: G l o b a l Vo i c e I S O m o d e m - E V B Evaluation Board for the Si2494/39/38/37/36/35/29/19/18/17 ISOModem Description Features The Global Voice ISOmodem EVB evaluation board provides the system designer with an easy way of evaluating the ISOmodem. The Voice ISOmodem EVB

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TPV-375

Abstract: transistor TPV375 TPV375 transposers
Contextual Info: GAE GREAT AMERICAN ELECTROINCS TPV-375 Silicon NPN power transistor TPV-375 is designed for construction of power amplifiers with a common amplifier channel for signals of picture and sound in Band III TV transposers and transmitters. Output Power: Frequency Range:

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

Contextual Info: MOTORCLA SC XSTRS/R F iz e q | fc.3t.7ES4 []Gflfl3bO 4 | 'T" 3 3 - ^ 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA T P V 3250B The RF Line VH F Linear Pow er Transistor 240 W — 230 M H z VH F LINEAR POWER TRANSISTOR . . . designed for 32 Volt VHF large signal am plifier applications requiring linearity. Inter­

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

MRF212

Abstract: motorola diode cross reference 2N6166 2N5590 transistor mrf212 cross sd1485 motorola transistor cross reference SD1400-2 MRF1946A MICROSEMI RF TRANSISTOR
Contextual Info: Summer 1997 Sertech Labs to Handle RF Die Sertech Labs has been appointed by Microsemi RF Products as its die processor/distributor for its line of high frequency transistors. The transistor line ranges from 2 MHZ to 4 GHZ and is primarily aimed at military and space applications.

smd transistor pk1

Abstract: Philips sbc 345 Temperature Control switching regulator ic LM 5304 pj12 diode ph10 led display 16 x 32 ic 5304 smd 8 pin pj14 diode ITT 7346 PJ8 diode MPC5516
Contextual Info: MPC5510EVB User Manual Revision 1.0 – September 2007 Note – This user manual is written for EVB PCB revision E MPC5510EVB User Manual Rev 1.0 Sept 2007 Revision History: Revision 0.1 Date March 2007 Author A. Robertson 1.0 September 2007 A. Robertson Comment