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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC2715NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B TPC2715NND03 30MHZ

    30MHZ

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC2715NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B TPC2715NND03 30MHZ TPC2715NND03 30MHZ