TP9012NND03 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
marking J3 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03	Original	PDF	WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz marking J3
2t1 transistor Abstract: marking 2t1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity	Original	PDF	WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA, 2t1 transistor marking 2t1
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03	Original	PDF	WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity	Original	PDF	WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA,