TP1N80E Search Results
TP1N80E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: MOTOROLA Order this document by TP1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N80E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination |
OCR Scan |
MTP1N80E/D TP1N80E parti19 21A-06 | |
|
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet TM O S E -FE T P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 0H M S T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n |
OCR Scan |
TP1N80E |