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    TOSHIBA WEEKLY CODE MARKING Search Results

    TOSHIBA WEEKLY CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA WEEKLY CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    114H1

    Abstract: TLP842 "Photo Interrupter"
    Text: TLP842 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP842 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Small-sized Personal OA Equipment The TLP842 is photointerrupter which consists of a GaAs infrared LED and an Si phototransistor.


    Original     		PDF TLP842 TLP842 UL94V-0) 114H1 "Photo Interrupter"

    TLP842

    Abstract: No abstract text available
    Text: TLP842 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP842 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP842 is photointerrupter which consists of a GaAs infrared LED and


    Original     		PDF TLP842 TLP842 UL94V-0) 11-4H1

    TLP846

    Abstract: No abstract text available
    Text: TLP846 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and


    Original     		PDF TLP846 TLP846 UL94V-0)

    Untitled

    Abstract: No abstract text available
    Text: TLP846 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and


    Original     		PDF TLP846 TLP846 UL94V-0) 11-4H2

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    cha marking code

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303 cha marking code

    toshiba weekly code marking

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102 toshiba weekly code marking

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    TPCP8505

    Abstract: BR 8505
    Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)


    Original     		PDF TPCP8505 12oducts TPCP8505 BR 8505

    TPCP8504

    Abstract: No abstract text available
    Text: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 400 to 1000 IC = 0.2 A Low collector-emitter saturation : VCE (sat) = 0.12 V (max)


    Original     		PDF TPCP8504 TPCP8504

    Untitled

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303

    Untitled

    Abstract: No abstract text available
    Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		PDF TPC8203

    Untitled

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303

    TLP846

    Abstract: No abstract text available
    Text: TLP846 TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and


    Original     		PDF TLP846 TLP846 UL94V-0) 11-4H2

    Untitled

    Abstract: No abstract text available
    Text: TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications High breakdown voltage: VCEO = −400 V 0.05 M A 5 8 Characteristics 2.4±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage


    Original     		PDF TPCP8604

    TPCP8601

    Abstract: No abstract text available
    Text: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 Strobo Flash Applications 0.05 M A 5 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) •


    Original     		PDF TPCP8601 TPCP8601

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    FR4 epoxy glass 1.6mm

    Abstract: No abstract text available
    Text: TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications High breakdown voltage: VCEO = −400 V 0.05 M A 5 8 Characteristics 2.4±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage


    Original     		PDF TPCP8604 FR4 epoxy glass 1.6mm

    cha marking code

    Abstract: No abstract text available
    Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		PDF TPC8203 cha marking code

    TPCP8501

    Abstract: No abstract text available
    Text: TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 100 to 300 IC = 0.3 A Low collector-emitter saturation : VCE (sat) = 0.2 V (max)


    Original     		PDF TPCP8501 TPCP8501

    Untitled

    Abstract: No abstract text available
    Text: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain : hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation : VCE (sat) = 0.12 V (max)


    Original     		PDF TPCP8504

    Untitled

    Abstract: No abstract text available
    Text: TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 100 to 300 IC = 0.3 A Low collector-emitter saturation : VCE (sat) = 0.2 V (max)


    Original     		PDF TPCP8501 17HIBA

    Untitled

    Abstract: No abstract text available
    Text: TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A Strobo Flash Applications 5 High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation: VCE (sat) = −0.2 V (max)


    Original     		PDF TPCP8602

    Untitled

    Abstract: No abstract text available
    Text: TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications 0.05 M A 5 8 High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation: VCE (sat) = −0.2 V (max)


    Original     		PDF TPCP8602