TOSHIBA TRANSISTOR K2604 Search Results

TOSHIBA TRANSISTOR K2604 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TOSHIBA TRANSISTOR K2604 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K2604 Abstract: toshiba transistor k2604 toshiba k2604 2SK2604 Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	2SK2604 K2604 toshiba transistor k2604 toshiba k2604 2SK2604	PDF
K2604 Abstract: 2SK2604 Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2604 K2604 2SK2604	PDF
toshiba k2604 Abstract: toshiba transistor k2604 K2604 Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2604 toshiba k2604 toshiba transistor k2604 K2604	PDF
K2604 Abstract: toshiba k2604 toshiba transistor k2604 2SK2604 Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604	PDF