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    TOSHIBA TRANSISTOR K2604 Search Results

    TOSHIBA TRANSISTOR K2604 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR K2604 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K2604

    Abstract: toshiba transistor k2604 toshiba k2604 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		2SK2604 K2604 toshiba transistor k2604 toshiba k2604 2SK2604 PDF

    K2604

    Abstract: 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 K2604 2SK2604 PDF

    toshiba k2604

    Abstract: toshiba transistor k2604 K2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 toshiba k2604 toshiba transistor k2604 K2604 PDF

    K2604

    Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604 PDF