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    TOSHIBA TRANSISTOR K2601 Search Results

    TOSHIBA TRANSISTOR K2601 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR K2601 Datasheets Context Search

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    toshiba transistor k2601

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Unit: mm


    Original     		2SK2601 toshiba transistor k2601 PDF

    K2601

    Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 K2601 toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65 PDF

    K2601

    Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 K2601 toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 PDF

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b PDF

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 toshiba K2601 K2601 toshiba transistor k2601 PDF

    toshiba K2601

    Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65 PDF