TOSHIBA TRANSISTOR IC 100A Search Results

TOSHIBA TRANSISTOR IC 100A Result Highlights (5)

Part	Manufacturer	Description
TLP627M	Toshiba Electronic Devices & Storage Corporation	Photocoupler (photodarlington transistor output), DC input, 5000 Vrms, DIP4
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TOSHIBA TRANSISTOR IC 100A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF \| t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS	OCR Scan	300uA EGA-2SK790-A EGA-2SK790-5	PDF
Toshiba 77 8A DIODE Contextual Info: TOSHIBA -CDISCRETE/OPTO} »El TQTTESD DDlbölfi 99D 9097250 TOSHIBA DISCRETE/OPTO 16818 D T -B R -IB TOSHIBA FIE L D EFFECT TRANSISTOR YT F 4 4 3 SIL IC O N N CHANNEL MOS TYPE (tf-H O S I) SEMICONDUCTOR ¿ToHúhti 1 Ti TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	100nA 250yA 250uA 00A/ys Toshiba 77 8A DIODE	PDF
Contextual Info: ~T=Í TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO f/Zìhìhn DE I ^ O ^ ï a S O 99D 16890 □ Dlbfl'ìG DT-B^-n TOSHIBA FIE L D EFFECT TRANSISTOR YT F 8 2 3 SIL IC O N N CHANNEL MOS TYPE SEMICONDUCTOR TECHNICAL DATA (DUMOSE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	500nA 250pA 250pA CHARACTERIST225V 00A/us	PDF
Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)	Original	GT5J301	PDF
8G151 Abstract: GT8G151 Contextual Info: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES	Original	GT8G151 8G151 GT8G151	PDF
GT5J301 Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)	Original	GT5J301 GT5J301	PDF
TOSHIBA 1N DIODE Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS	OCR Scan	DT-39-13 100nA 250uA 00A/us TOSHIBA 1N DIODE	PDF
YTA640 Contextual Info: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	YTA640 YTA640	PDF
diode SS 3 Contextual Info: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	2SK2699 diode SS 3	PDF
2SK3017 Contextual Info: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance	OCR Scan	2SK3017 L-12-(	PDF
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage	Original	GT15J301	PDF
GT15J301 Abstract: TOSHIBA IGBT Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage	Original	GT15J301 GT15J301 TOSHIBA IGBT	PDF
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303	PDF
2-10R1C Abstract: GT10J303 igbt 300V 10A Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303 2-10R1C GT10J303 igbt 300V 10A	PDF

10j303 Abstract: IGBT Guide GT10J303 Toshiba c Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303 10j303 IGBT Guide GT10J303 Toshiba c	PDF
2-10R1C Abstract: 5J301 GT5J301 Toshiba c Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage	Original	GT5J301 2-10R1C 5J301 GT5J301 Toshiba c	PDF
GT15J311 Contextual Info: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)	Original	GT15J311	PDF
GT50J322 Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)	Original	GT50J322 GT50J322	PDF
GT30J322 Abstract: IGBT Guide Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)	Original	GT30J322 GT30J322 IGBT Guide	PDF
Contextual Info: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)	Original	GT15J311	PDF
TOSHIBA J55 Abstract: 2SK2746 SC-65 Contextual Info: TOSHIBA 2SK2746 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 MAX. •	OCR Scan	2SK2746 -l-30 TOSHIBA J55 SC-65	PDF
Contextual Info: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low D rain-Source O N Resistance	OCR Scan	2SK2611	PDF
2SK2599 Contextual Info: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2	OCR Scan	2SK2599 2SK2599	PDF
ENV-05s Abstract: 5anh Contextual Info: TOSHIBA 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	2SK2381 --50V, ENV-05s 5anh	PDF

TOSHIBA TRANSISTOR IC 100A Search Results

TOSHIBA TRANSISTOR IC 100A Result Highlights (5)

TOSHIBA TRANSISTOR IC 100A Datasheets Context Search

Toshiba 77 8A DIODE

8G151

GT5J301

TOSHIBA 1N DIODE

YTA640

diode SS 3

2SK3017

GT15J301

2-10R1C

10j303

2-10R1C

GT15J311

GT50J322

GT30J322

TOSHIBA J55

2SK2599

ENV-05s