Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS
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300uA
EGA-2SK790-A
EGA-2SK790-5
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Toshiba 77 8A DIODE
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO} »El TQTTESD DDlbölfi 99D 9097250 TOSHIBA DISCRETE/OPTO 16818 D T -B R -IB TOSHIBA FIE L D EFFECT TRANSISTOR YT F 4 4 3 SIL IC O N N CHANNEL MOS TYPE (tf-H O S I) SEMICONDUCTOR ¿ToHúhti 1 Ti TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250yA
250uA
00A/ys
Toshiba 77 8A DIODE
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Untitled
Abstract: No abstract text available
Text: ~T=Í TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO f/Zìhìhn DE I ^ O ^ ï a S O 99D 16890 □ Dlbfl'ìG DT-B^-n TOSHIBA FIE L D EFFECT TRANSISTOR YT F 8 2 3 SIL IC O N N CHANNEL MOS TYPE SEMICONDUCTOR TECHNICAL DATA (DUMOSE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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500nA
250pA
250pA
CHARACTERIST225V
00A/us
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PDF
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Untitled
Abstract: No abstract text available
Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)
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GT5J301
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8G151
Abstract: GT8G151
Text: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES
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GT8G151
8G151
GT8G151
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GT5J301
Abstract: No abstract text available
Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)
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GT5J301
GT5J301
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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PDF
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YTA640
Abstract: No abstract text available
Text: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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YTA640
YTA640
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diode SS 3
Abstract: No abstract text available
Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2699
diode SS 3
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PDF
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2SK3017
Abstract: No abstract text available
Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance
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2SK3017
L-12-(
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PDF
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Untitled
Abstract: No abstract text available
Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage
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GT15J301
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GT15J301
Abstract: TOSHIBA IGBT
Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage
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GT15J301
GT15J301
TOSHIBA IGBT
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PDF
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Untitled
Abstract: No abstract text available
Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)
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GT10J303
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2-10R1C
Abstract: GT10J303 igbt 300V 10A
Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)
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GT10J303
2-10R1C
GT10J303
igbt 300V 10A
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10j303
Abstract: IGBT Guide GT10J303 Toshiba c
Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)
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GT10J303
10j303
IGBT Guide
GT10J303
Toshiba c
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2-10R1C
Abstract: 5J301 GT5J301 Toshiba c
Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage
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Original
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GT5J301
2-10R1C
5J301
GT5J301
Toshiba c
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GT15J311
Abstract: No abstract text available
Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)
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GT15J311
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GT50J322
Abstract: No abstract text available
Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)
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GT50J322
GT50J322
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GT30J322
Abstract: IGBT Guide
Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)
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GT30J322
GT30J322
IGBT Guide
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PDF
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Untitled
Abstract: No abstract text available
Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)
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GT15J311
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TOSHIBA J55
Abstract: 2SK2746 SC-65
Text: TOSHIBA 2SK2746 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 MAX. •
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2SK2746
-l-30
TOSHIBA J55
SC-65
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low D rain-Source O N Resistance
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2SK2611
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PDF
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2SK2599
Abstract: No abstract text available
Text: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2
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2SK2599
2SK2599
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PDF
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ENV-05s
Abstract: 5anh
Text: TOSHIBA 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2381
--50V,
ENV-05s
5anh
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PDF
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