TOSHIBA TRANSISTOR A 802 Search Results

2SA1802

Abstract: 2SC4681
Contextual Info: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • Excellent hEE Linearity : hFE l = 200-600 (Vce = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = - 3 A)

Contextual Info: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )

Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •

Contextual Info: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)

2SA1802

Abstract: 2SC4681 A1802
Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • Excellent hpE Linearity : hFE l = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE(2) - 140 (Min.) (Vc e = -2 V , Iq = - 3 A)

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •

TPCA 8023

Abstract: tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

TPCA 8023

Abstract: tpca 8023-h TPCA8023-H TPCA 8023 h
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

TPCA 8023

Abstract: TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

Contextual Info: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

Contextual Info: T O SH IB A TPS621JPS622 TOSHIBA PHOTO TRANSISTOR OPTO-ELECTRONIC SWITCH FLOPPY DISK DRIVE SILICON NPN EPITAXIAL PLANAR TPS621. TPS622 UNIT IN : mm o p t ic a l m o u s e 2 .S ± 0 .1 OPTICAL TOUCH SWITCH Small side view epoxy resin package Fast response speed

7B1A

Abstract: 2SA1802 2SC4681 A1802
Contextual Info: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

diode varicap BB 112

Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Contextual Info: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications 0.5±0.1 Unit: mm • High speed switching • Low drain-source ON-resistance 4 High forward transfer admittance: |Yfs| = 46 S (typ.)

TPCA8027

Abstract: TPCA8027-H
Contextual Info: TPCA8027-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSⅢ TPCA8027-H Switching Regulator Applications Motor Drive Applications Unit: mm High-speed switching • Small gate charge: QSW = 8.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)

8024 digit

Abstract: tpca8024
Contextual Info: TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCA8024 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCA8026 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 5.0 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.)

TPCA8028-H

Abstract: TPCA8028
Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

TPCA8020-H

Abstract: toshiba ccfl inverter
Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1

TPCA8024

Abstract: 8024 digit
Contextual Info: TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCA8024 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)