TPCA8022-H
Abstract: No abstract text available
Text: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •
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TPCA8022-H
TPCA8022-H
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TPCA8022-H
Abstract: No abstract text available
Text: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •
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TPCA8022-H
TPCA8022-H
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TPCA 8023
Abstract: tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
tpca 8023-h
TPCA 8023 h
tpca8023h
TPCA8023-H
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TPCA 8023
Abstract: tpca 8023-h TPCA8023-H TPCA 8023 h
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
tpca 8023-h
TPCA8023-H
TPCA 8023 h
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TPCA 8023
Abstract: TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
TPCA8023-H
TPCA 8023 h
8023h
TPCA*8023
tpca8023
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Untitled
Abstract: No abstract text available
Text: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Motorola transistor smd marking codes
Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become
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diode varicap BB 112
Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Text: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。
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BFU725F
diode varicap BB 112
SMD TRANSISTOR MARKING 02N
toshiba smd marking code transistor
SOT23-6 MARKING 02n
smd code marking NEC rf transistor
transistor smd marking CODE Wb
smd transistor m29 sot343
UXA23465
RF LNB C band chipset
smd transistor M26 sot23
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TPCA8022-H
Abstract: No abstract text available
Text: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications 0.5±0.1 Unit: mm • High speed switching • Low drain-source ON-resistance 4 High forward transfer admittance: |Yfs| = 46 S (typ.)
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TPCA8022-H
TPCA8022-H
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TPCA8027
Abstract: TPCA8027-H
Text: TPCA8027-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSⅢ TPCA8027-H Switching Regulator Applications Motor Drive Applications Unit: mm High-speed switching • Small gate charge: QSW = 8.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)
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TPCA8027-H
TPCA8027
TPCA8027-H
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8024 digit
Abstract: tpca8024
Text: TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCA8024 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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TPCA8024
8024 digit
tpca8024
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Untitled
Abstract: No abstract text available
Text: TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCA8026 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 5.0 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.)
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TPCA8026
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TPCA8028-H
Abstract: TPCA8028
Text: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •
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TPCA8028-H
TPCA8028-H
TPCA8028
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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TPCA8020-H
Abstract: toshiba ccfl inverter
Text: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1
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TPCA8020-H
TPCA8020-H
toshiba ccfl inverter
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TPCA8024
Abstract: 8024 digit
Text: TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCA8024 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 8 Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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TPCA8024
TPCA8024
8024 digit
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2SA1802
Abstract: 2SC4681
Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • Excellent hEE Linearity : hFE l = 200-600 (Vce = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = - 3 A)
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2SA1802
2SC4681
2SA1802
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )
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2SA1802
2SC4681
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Untitled
Abstract: No abstract text available
Text: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •
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2SA1802
2SC4681
95IV1AX.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)
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2SA1802
--60mA)
2SC4681
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2SA1802
Abstract: 2SC4681 A1802
Text: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • Excellent hpE Linearity : hFE l = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE(2) - 140 (Min.) (Vc e = -2 V , Iq = - 3 A)
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2SA1802
2SC4681
2SA1802
A1802
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPS621JPS622 TOSHIBA PHOTO TRANSISTOR OPTO-ELECTRONIC SWITCH FLOPPY DISK DRIVE SILICON NPN EPITAXIAL PLANAR TPS621. TPS622 UNIT IN : mm o p t ic a l m o u s e 2 .S ± 0 .1 OPTICAL TOUCH SWITCH Small side view epoxy resin package Fast response speed
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TPS621JPS622
TPS621.
TPS622
TPS622
TLN117
TPS621
TLN117
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7B1A
Abstract: 2SA1802 2SC4681 A1802
Text: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )
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2SA1802
2SC4681
7B1A
2SA1802
A1802
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