K12A50D
Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
Contextual Info: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
|
Original
|
TK12A50D
K12A50D
toshiba marking code transistor k12a50d
TK12A50D
K12a50
K12A50D*
AR-500
K-12A
|
PDF
|
K12A50D
Abstract: K12a50 TK12A50D
Contextual Info: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
|
Original
|
TK12A50D
K12A50D
K12a50
TK12A50D
|
PDF
|
K12A50D
Abstract: K*A50D
Contextual Info: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
|
Original
|
TK12A50D
K12A50D
K*A50D
|
PDF
|
K12A50D
Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
Contextual Info: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
|
Original
|
TK12A50D
K12A50D
K12a50
tk12a50
toshiba marking code transistor k12a50d
TK12A50D
K*A50D
K12A
TK-12A
|
PDF
|