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    TOSHIBA K5A50D Search Results

    TOSHIBA K5A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

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    K5A50D

    Abstract: No abstract text available
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D 15led K5A50D PDF

    K5A50D

    Abstract: K5A50D DATASHEET TK5A50D K5A50 transistor K5A50D
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D K5A50D K5A50D DATASHEET TK5A50D K5A50 transistor K5A50D PDF

    K5A50D

    Abstract: transistor K5A50D toshiba K5A50D TK5A50D K5A50 K5A5
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D K5A50D transistor K5A50D toshiba K5A50D TK5A50D K5A50 K5A5 PDF

    K5A50D

    Abstract: K5A50
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D 15mitation, K5A50D K5A50 PDF

    k5a50d

    Abstract: K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D k5a50d K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D PDF