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    TOSHIBA K4107 Search Results

    TOSHIBA K4107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K4107 Datasheets Context Search

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    k4107

    Abstract: toshiba k4107 2SK4107
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance


    Original     		PDF 2SK4107 k4107 toshiba k4107 2SK4107

    k4107

    Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107

    Untitled

    Abstract: No abstract text available
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK4107

    k4107

    Abstract: toshiba k4107 2SK4107 SC-65 25C206 2SK4107F
    Text: 2SK4107 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4107 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.33 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 8.5 S (標準)


    Original     		PDF 2SK4107 SC-65 2-16C1B k4107 toshiba k4107 2SK4107 SC-65 25C206 2SK4107F